Product Description:

ZMSH is the leading manufacturer and supplier of SiC (Silicon Carbide) substrate wafers. Our wafers are optimal for electronic devices with high power and high frequency, as well as for light emitting diodes (LED).

The best price in the market for 2 inch and 3 inch Research grade Silicon Carbide substrate wafers is offered by us. LED is an energy-saving cold light source, which consists of the combination of semiconductor electrons and holes, and is one of the most commonly used electronic components.

Features:

Technical Parameters:

Silicon carbide (SiC) substrates or wafers can have either the 6H or 4H crystal structure, with lattice parameters of 6H (a=3.073 Å, c=15.117 Å) and 4H (a=3.076Å, c=10.053 Å) respectively. The 6H structures has a stacking sequence of ABCACB, and 4H structures have ABCB. They are available in production grade, research grade, or dummy grade.

SiC substrates can be N-type or semi-insulating, with the band-gap at 3.23 eV. The Mohs scale hardness for SiC substrates is 9.2, and the thermal conductivity is 3.2-4.9 W/ cm.K. The dielectric constants are e(11)=e(22)=9.66 and e(33)=10.33. Resistivity ranges from 4H-SiC-N (0.015-0.028 Ω·cm), 6H-SiC-N (0.02-0.1 Ω·cm), to 4H/6H-SiC-SI (>1E7 Ω·cm). Packaging is done in a Class 100 clean bag, in a Class 1000 clean room.

Applications:

Silicon Carbide Wafer, commonly known as SiC wafer, is a kind of substrate that is suitable for automotive electronics, optoelectronic devices, and industrial applications. It includes 4H-N Type SiC substrate and Semi-Insulating SiC substrate. These Silicon Carbide Wafer varieties are capable of withstanding high temperatures and creating highly efficient electronic circuits.

The 4H-N type SiC substrate is the most widely used variety. It provides higher breakdown voltage, better temperature stability, and lower leakage current than most wafer materials. Semi-Insulating SiC substrate, on the other hand, has a lower rate of electrical leakage. It also has a constant breakdown voltage over time and temperature and low temperature coefficient of resistance.

SiC wafer is an ideal choice for energy and efficiency-conscious designs and is gaining more and more traction in the automotive, optoelectronic, and industrial applications. It has intrinsic thermal and electrical properties that are beneficial for microelectronic device performance and is widely used in the development of high-performance, low-power ECUs and optoelectronic devices.

Support and Services:

We offer several levels of technical support for our Silicon Carbide Wafer products. Our team of experienced engineers and technicians are available to help with any of your needs.

• Installation and maintenance support
• Troubleshooting
• Product and system upgrades
• Software support and updates
• Technical training and seminars
• Consulting services

We also provide a variety of services to ensure that your Silicon Carbide Wafer products are operating at optimal performance. Our services include:

• Product testing and validation
• Onsite repair and replacement
• Customized product solutions
• Product certification and compliance
• Spare parts supply
• Extended warranty and service contracts

Packing and Shipping:

Packaging and Shipping Silicon Carbide Wafers:

Silicon Carbide Wafers are shipped in protective containers to ensure that they remain safe during transit. The packaging must include cushioning materials to reduce shock and vibration. They are typically shipped as a single unit and must be handled with care. Special packaging is available for long-term storage or high-temperature applications.

The shipping method for Silicon Carbide Wafers can vary depending on the customer’s needs, but typically they are sent via a courier service. All packages must be clearly labeled with the contents, recipient, and sender. Additionally, the courier should be provided with the necessary paperwork for customs clearance.

FAQ: