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Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
Specifications
Brand Name :
zmkj
Model Number :
InP
Place of Origin :
CHINA
MOQ :
3pcs
Price :
by case
Payment Terms :
T/T, Western Union
Supply Ability :
500pcs
Delivery Time :
2-4weeks
Packaging Details :
single wafer package in 1000-grade cleaning room
Material :
InP
growth method :
vFG
SIZE :
2~ 4 INCH
Thickness :
350-650um
application :
III-V direct bandgap semiconductor material
surface :
ssp/dsp
package :
single wafer box
Description

2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + Indium Phosphide Based Epitaxial Wafer Single Crystal Indium Phosphide Wafers InP wafer 2 inch/3 inch/4 inch 350-650 um InP Crystal Wafer Dummy Prime Semiconductor Substrate

Shanghai Xinkehui New Materials Co. Ltd.
We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.
size (mm)
Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized
Ra
Surface roughness(Ra):<=5A
Polish
Single or doubles side polished
Package
100 single or doubles side polished

It has the advantages of high electronic limit drift speed, good radiation resistance, and good heat conduction. Suitable for
manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.

Features of Inp Wafer

1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical
performance.
2. using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3. the wafer is polished by chemical mechanical polishing (CMP) technology, with surface roughness <0.5nm
4. to achieve the "open box ready to use" requirements
5. according to user requirements, special specifications product processing
Wafer Diameter(mm)
50.8±0.3
76.2±0.3
100±0.3
Thickness(um)
350±25
625±25
625±25
TTV-P/P(um)
≤10
≤10
≤10
TTv-P/E(um)
≤10
≤15
≤15
WARP(um)
≤15
≤15
≤15
OF(mm)
17±1
22±1
32.5±1
OF/IF(mm)
7±1
12±1
18±11

Description Application Wavelength Range
InP Based Epi-wafer FP laser ~1310nm; ~1550nm;~1900nm
DFB laser 1270nm~1630nm
Avalanche photo-detector 1250nm~1600nm
Photo-detector 1250nm~1600nm/>2.0um (InGaAs absorptive layer);<1.4μm (InGaAsP absorptive layer)
Product Name
High Purity Indium Phosphide Polycrystalline Substrate Sheet
Iron Doped Indium Phosphide Crystal
N-type and P-type Indium Phosphide Crystal
4 Inch Indium Phosphide Single Crystal Ingot
Indium Phosphide Based Epitaxial Wafer
Indium Phosphide Semiconductor Crystal Substrate
Indium Phosphide Single Crystal Substrate
Indium Antimonide Single Crystal Substrate
Indium Arsenic Single Crystal Substrate

Single Crystal InP Indium Phosphide Wafers 350 - 650um ThicknessSingle Crystal InP Indium Phosphide Wafers 350 - 650um Thickness

---FAQ –

Q: Are you a trading company or manufacturer?

A: zmkj is a trading company but has a sapphire manufacturer
as a supplier of semiconductor materials wafers for a wide span of applications.

Q: How long is your delivery time?

A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not

in stock, it is according to quantity.

Q: Do you provide samples? is it free or extra?

A: Yes, we could offer the sample for free charge but do not pay the cost of freight.

Q: What are your terms of payment?

A: Payment<= 1000 USD, 100% in advance. Payment>=1000USD,
50% T/T in advance, balance before shipment.

Product tags

indium phosphide wafer

,

96% al2o3 ceramic substrate

,

ceneo laminat fr4 pcb
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Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness

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Product Detail
Brand Name :
zmkj
Model Number :
InP
Place of Origin :
CHINA
MOQ :
3pcs
Price :
by case
Payment Terms :
T/T, Western Union
Contact Supplier
video
Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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