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Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Specifications
Brand Name :
zmkj
Model Number :
InP
Place of Origin :
CHINA
MOQ :
3pcs
Price :
by case
Payment Terms :
T/T, Western Union
Supply Ability :
500pcs
Delivery Time :
2-4weeks
Packaging Details :
single wafer package in 1000-grade cleaning room
Material :
InP
growth method :
vFG
SIZE :
2~ 4 INCH
Thickness :
350-650um
application :
III-V direct bandgap semiconductor material
surface :
ssp/dsp
package :
single wafer box
Description

2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe +

growth (modified VFG method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed.

The dopant (Fe, S, Sn or Zn)is added to the crucible along with the polycrystal. High pressure is applied inside the chamber to prevent decomposition of the Indium Phosphide.he company has developed a process to yield fully stoechiometric, high purity and low dislocation density inP single crystal.

The VFG technique improves upon the LEC method thanks to a thermal baffle technology in connection with a numerical

modeling of thermal growth conditions. tCZ is a cost-effective mature technology with high quality reproducibility from boule to boule.

Applications:
IIt has the advantages of high electronic limit drift speed, good radiation resistance and good heat conduction. Suitable for manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.

Features:
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.
2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product processing

Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

size (mm) Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized
ra Surface roughness(Ra):<=5A
polish single or doubles side polished
package 100 grade cleaning plastic bag in 1000 cleaning room

Thick 650um 4 Inch Single Crystal InP Semiconductor SubstrateThick 650um 4 Inch Single Crystal InP Semiconductor Substrate

---FAQ –

Q: Are you trading company or manufacturer ?

A: zmkj is a trading company but have a sapphire manufacturer
as a supplier of semiconductor materials wafers for a wide span of applications.

Q: How long is your delivery time?

A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not

in stock,it is according to quantity.

Q: Do you provide samples ? is it free or extra ?

A: Yes, we could offer the sample for free charge but do not pay the cost of freight.

Q: What is your terms of payment ?

A: Payment<=1000USD, 100% in advance. Payment>=1000USD,
50% T/T in advance ,balance before shippment.
If you have another question, pls feel free to contact us as below:

Product tags

fr4 substrate thickness

,

fr4 substrate

,

ceneo laminat fr4 pcb
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Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

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Product Detail
Brand Name :
zmkj
Model Number :
InP
Place of Origin :
CHINA
MOQ :
3pcs
Price :
by case
Payment Terms :
T/T, Western Union
Contact Supplier
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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