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350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial
350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial
350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial
350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial
350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial
350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial
Specifications
Brand Name :
ZMKJ
Model Number :
4inch sic wafers
Place of Origin :
CHINA
MOQ :
3pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Supply Ability :
1-50pcs/month
Delivery Time :
1-6weeks
Packaging Details :
single wafer package in 100-grade cleaning room
Material :
SiC single crystal 4h-N
Grade :
Production grade
Thicnkss :
1.5mm
Suraface :
dsp
Application :
epitaxial
Diameter :
4inch
color :
Green
MPD :
<1cm-2
Description

Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single

sic wafer 4Inch prime research dummy Grade 4H-N/SEMI standard size

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61
ne = 2.66

no = 2.60
ne = 2.65
Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K
Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial

4H-N 4inch diameter Silicon Carbide (SiC) Substrate Specification

2inch diameter Silicon Carbide (SiC) Substrate Specification
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade
Diameter 100. mm±0.5mm
Thickness 350 μm±25μm or 500±25um Or other customized thickness
Wafer Orientation Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density ≤0 cm-2 ≤1cm-2 ≤5cm-2 ≤10 cm-2
Resistivity 4H-N 0.015~0.028 Ω•cm
6H-N 0.02~0.1 Ω•cm
4/6H-SI ≥1E5 Ω·cm
Primary Flat {10-10}±5.0°
Primary Flat Length 18.5 mm±2.0 mm
Secondary Flat Length 10.0mm±2.0 mm
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion 1 mm
TTV/Bow /Warp ≤10μm /≤10μm /≤15μm
Roughness Polish Ra≤1 nm
CMP Ra≤0.5 nm
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each

Production display show

350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial

350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial
CATALOGUE COMMON SIZE In OUR INVENTORY LIST

4H-N Type / High Purity SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

4H Semi-insulating / High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
Customzied size for 2-6inch

SiC Applications

Application areas

  • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
  • diodes, IGBT, MOSFET
  • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.

FAQ
Q1. Are you a factory?
A1. Yes, we are a professional manufacturer of optical components, we have more than 8years experience in wafers and optical lens process.
Q2. What is the MOQ of your products?
A2. No MOQ for customer if our product is in stock, or 1-10pcs.
Q3:Can I custom the products based on my requirement?
A3.Yes, we can custom the material, specifications and optical coating for youroptical components as your requirement.
Q4. How can I get sample from you?
A4. Just send us your requirements, then we will sendsamples accordingly.
Q5. How many days will samples be finished? How about mass products?
A5. Generally, we need 1~2weeks to finish the sample production. As for the mass products, it depends on your order quantity.
Q6. What's the delivery time?
A6. (1)For inventory: the delivery time is 1-3 working days. (2) For customized products: the delivery time is 7 to 25 working days.
According to the quantity.
Q7. How do you control the quality?
A7. More than four times quality inspect during production process,we can provide the Quality test report.
Q8. How about your optical lens production ability per Month?
A8. About 1,000pcs/Month.According to the detail requirement.

Product tags

silicon carbide wafer

,

structure of silicon carbide

,

silicon carbide structure
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350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial

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Product Detail
Brand Name :
ZMKJ
Model Number :
4inch sic wafers
Place of Origin :
CHINA
MOQ :
3pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Contact Supplier
350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial
350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial
350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Synthetic Gem Stone, Doped Sapphire Crystal
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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