Specifications
Brand Name :
ZMKJ
Model Number :
6H-N
Place of Origin :
CHINA
MOQ :
1pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Supply Ability :
1-50pcs/month
Delivery Time :
1-6weeks
Packaging Details :
single wafer package in 100-grade cleaning room
Material :
SiC single crystal 6H-N type
Grade :
Dummy
Thicnkss :
0.35MM/10-15mm
Suraface :
polished
Application :
bearing test
Diameter :
2inch
color :
Green
Description


Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61
ne = 2.66

no = 2.60
ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K

Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots

High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification

2inch diameter Silicon Carbide (SiC) Substrate Specification
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade
Diameter 50.8 mm±0.2mm
Thickness 330 μm±25μm or 430±25um
Wafer Orientation Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density ≤0 cm-2 ≤5 cm-2 ≤15 cm-2 ≤100 cm-2
Resistivity 4H-N 0.015~0.028 Ω•cm
6H-N 0.02~0.1 Ω•cm
4/6H-SI ≥1E5 Ω·cm
Primary Flat {10-10}±5.0°
Primary Flat Length 18.5 mm±2.0 mm
Secondary Flat Length 10.0mm±2.0 mm
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion 1 mm
TTV/Bow /Warp ≤10μm /≤10μm /≤15μm
Roughness Polish Ra≤1 nm
CMP Ra≤0.5 nm
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each

2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots

2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots
2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots
CATALOGUE COMMON SIZE

4H-N Type / High Purity SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots


4H Semi-insulating / High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
Customzied size for 2-6inch

SiC Applications

Application areas

  • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
  • diodes, IGBT, MOSFET
  • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.

2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots

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2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots

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Brand Name :
ZMKJ
Model Number :
6H-N
Place of Origin :
CHINA
MOQ :
1pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Contact Supplier
2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots
2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots
2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots
2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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