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High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
Specifications
Brand Name :
ZMKJ
Model Number :
4inch high purity
Place of Origin :
CHINA
MOQ :
1pcs
Price :
1000-2000usd/pcs by FOB
Payment Terms :
T/T, Western Union, MoneyGram
Supply Ability :
1-50pcs/month
Delivery Time :
1-6weeks
Packaging Details :
single wafer package in 100-grade cleaning room
Material :
SiC high purity single crystal 4H-semi type
Grade :
Dummy / research /Production grade
Thicnkss :
500um
Suraface :
CMP/MP
Application :
5G device
Diameter :
100±0.3mm
Description

High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

PROPERTIES of 4H-SiC Single Crystal

  • Lattice Parameters: a=3.073Å c=10.053Å
  • Stacking Sequence: ABCB
  • Mohs Hardness: ≈9.2
  • Density: 3.21 g/cm3
  • Therm. Expansion Coefficient: 4-5×10-6/K
  • Refraction Index: no= 2.61 ne= 2.66
  • Dielectric Constant: 9.6
  • Thermal Conductivity: a~4.2 W/cm·K@298K
  • (N-type, 0.02 ohm.cm) c~3.7 W/cm·K@298K
  • Thermal Conductivity: a~4.9 W/cm·K@298K
  • (Semi-insulating) c~3.9 W/cm·K@298K
  • Band-gap: 3.23 eV Band-gap: 3.02 eV
  • Break-Down Electrical Field: 3-5×10 6V/m
  • Saturation Drift Velocity: 2.0×105m/

High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification

4 inch Diameter High Purity 4H Silicon Carbide Substrate Specifications

SUBSTRATE PROPERTY

Production Grade

Research Grade

Dummy Grade

Diameter

100.0 mm+0.0/-0.5 mm

Surface Orientation

{0001} ±0.2°

Primary Flat Orientation

<11-20> ± 5.0 ̊

Secondary Flat Orientation

90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up

Primary Flat Length

32.5 mm ±2.0 mm

Secondary Flat Length

18.0 mm ±2.0 mm

Wafer Edge

Chamfer

Micropipe Density

≤5 micropipes/ cm2

≤10 micropipes/ cm2

≤50 micropipes/ cm2

Polytype areas by high-intensity light

None permitted

≤10% area

Resistivity

≥1E5 Ω·cm

(area 75%)≥1E5 Ω·cm

Thickness

350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm

TTV

≦10μm

≦15 μm

Bow(absolute value)

≦25 μm

≦30 μm

Warp

≦45 μm

Surface Finish

Double Side Polish, Si Face CMP(chemical polishing)

Surface Roughness

CMP Si Face Ra≤0.5 nm

N/A

Cracks by high-intensity light

None permitted

Edge chips/indents by diffuse lighting

None permitted

Qty.2 <1.0 mm width and depth

Qty.2 <1.0 mm width and depth

Total usable area

≥90%

≥80%

N/A

*The other specifications can be customized according to customer’s requirements

6 inch High-purity Semi-insulating 4H-SiC Substrates Specifications

Property

U(Ultra) Grade

P(Production)Grade

R(Research)Grade

D(Dummy)Grade

Diameter

150.0 mm±0.25 mm

Surface Orientation

{0001} ± 0.2°

Primary Flat Orientation

<11-20> ± 5.0 ̊

Secondary flat Orientation

N/A

Primary Flat Length

47.5 mm ±1.5 mm

Secondary flat Length

None

Wafer Edge

Chamfer

Micropipe Density

≤1 /cm2

≤5 /cm2

≤10 /cm2

≤50 /cm2

Polytype area by High-intensity Light

None

≤ 10%

Resistivity

≥1E7 Ω·cm

(area 75%)≥1E7 Ω·cm

Thickness

350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm

TTV

≦10 μm

Bow(Absolute Value)

≦40 μm

Warp

≦60 μm

Surface Finish

C-face: Optical polished, Si-face: CMP

Roughness(10μm×10μm)

CMP Si-face Ra<0.5 nm

N/A

Crack by High-intensity Light

None

Edge Chips/Indents by Diffuse Lighting

None

Qty≤2, the length and width of each<1mm

Effective Area

≥90%

≥80%

N/A


* Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

About SiC Substrates Applications
CATALOGUE COMMON SIZE

4H-N Type / High Purity SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

4H Semi-insulating / High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
Customzied size for 2-6inch

High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

Sales & Customer Service

Materials Purchasing

The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.

Quality

During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.

Service

We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.

we are at your side by any time when you have problem,and resolve it in 10hours.

Product tags

silicon carbide wafer

,

ceramics silicon carbide density

,

silicon carbide composition
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High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

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Product Detail
Brand Name :
ZMKJ
Model Number :
4inch high purity
Place of Origin :
CHINA
MOQ :
1pcs
Price :
1000-2000usd/pcs by FOB
Payment Terms :
T/T, Western Union, MoneyGram
Contact Supplier
High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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