4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs
4 inch Conductive SiC Wafer Specification | ||||
Product | 4H-SiC | |||
Grade | Grade I | Grade II | Grade III | |
polycrystalline areas | None permitted | None permitted | <5% | |
polytype areas | None permitted | ≤20% | 20% ~ 50% | |
Micropipe Density) | < 5micropipes/cm-2 | < 30micropipes/cm-2 | <100micropipes/cm-2 | |
Total usable area | >95% | >80% | N/A | |
Diameter | 100.0 mm +0/-0.5 mm | |||
Thickness | 500 μm ± 25 μm or Customer Specification | |||
Dopant | n type: nitrogen | |||
Primary Flat Orientation) | Perpendicular to <11-20> ± 5.0° | |||
Primary Flat Length | 32.5 mm ± 2.0 mm | |||
Secondary Flat Orientation) | 90° CW from Primary flat ± 5.0° | |||
Secondary Flat Length) | 18.0 mm ± 2.0 mm | |||
On axis Wafer Orientation) | {0001} ± 0.25° | |||
Off axis Wafer Orientation | 4.0° toward <11-20> ± 0.5° or Customer Specification | |||
TTV/BOW/Warp | < 5μm / <10μm /< 20μm | |||
Resistivity | 0.01~0.03 Ω×cm | |||
Surface Finish | C Face polish.Si Face CMP (Si face: Rq < 0.15 nm) or Customer Specification | Double side polish |
4H-N Type / High Purity SiC wafer 2 inch 4H N-Type SiC wafer 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer 6 inch 4H N-Type SiC wafer |
4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer | |
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