2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor

InAsSb/In-AsPSb, InNAsSb and other heterojunction materials can be grown on InAs single crystal as the substrate, and an infrared light-emitting device with a wavelength of 2 to 14 μm can be fabricated. The AlGaSb superlattice structure material can also be epitaxially grown by using InAs single crystal substrate. Mid-infrared quantum cascade laser. These infrared devices have good application prospects in the fields of gas monitoring, low-loss fiber communication, etc. In addition, InAs single crystals have high electron mobility and are ideal materials for making Hall devices.

Applications:
InAs single crystal can be used as a substrate material to grow a heterostructure material such as InAsSb/InAsPSb or InAsPSb to fabricate an infrared light-emitting device having a wavelength of 2-12 μm. The InAsPSb superlattice structure material can also be epitaxially grown by using InAs single crystal substrate to fabricate a mid-infrared quantum cascade laser. These infrared devices have good application prospects in the field of gas detection and low loss fiber communication. In addition, InAs single crystals have high electron mobility and are an ideal material for making Hall devices.

Features:
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.
2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product processing