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2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
Specifications
Brand Name :
zmkj
Model Number :
4inch SEMI
Place of Origin :
CHINA
MOQ :
5pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Supply Ability :
500pcs per month
Delivery Time :
2-4weeks
Packaging Details :
single wafer packed in 6"plastic box under N2
Material :
GaAs single crystal
SIZE :
4INCH
thickness :
625um or customzied
OF type :
OF Flat
Orientation :
（100）2°off
Surface :
DSP
Growth method :
VFG
Description

2inch/3inch /4inch /6inch S-C-N Type/ semi-insulation /Si-doped Gallium arsenide GaAs Wafer

Product Description

Our 2’’ to 6’’ semi-conducting & semi-insulating GaAs crystal & wafer are wildly used in semiconductor integrated circuit application & LED general lighting application.

GaAs Wafer Feature and Application
FeatureApplication field
High electron mobilityLight emitting diodes
High frequencyLaser diodes
High conversion efficiencyPhotovoltaic devices
Low power consumptionHigh Electron Mobility Transistor
Direct band gapHeterojunction Bipolar Transistor

2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED

2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
PRODUCT DESCRIPTION

Specifications of semi-conducting GaAs wafer

Growth Method

VGF

Dopant

p-type: Zn

n-type: Si

Wafer Shape

Round (dia: 2", 3", 4", 6")

Surface Orientation *

(100)±0.5°

* Other Orientations maybe available upon request

Dopant

Si (n-type)

Zn (p-type)

Carrier Concentration (cm-3)

( 0.8-4) × 1018

( 0.5-5) × 1019

Mobility (cm2/V.S.)

( 1-2.5) × 103

50-120

Etch Pitch Density (cm2)

100-5000

3,000-5,000

Wafer Diameter (mm)

50.8±0.3

76.2±0.3

100±0.3

Thickness (µm)

350±25

625±25

625±25

TTV [P/P] (µm)

≤ 4

≤ 4

≤ 4

TTV [P/E] (µm)

≤ 10

≤ 10

≤ 10

WARP (µm)

≤ 10

≤ 10

≤ 10

OF (mm)

17±1

22±1

32.5±1

OF / IF (mm)

7±1

12±1

18±1

Polish*

E/E,
P/E,
P/P

E/E,
P/E,
P/P

E/E,
P/E,
P/P

Specifications of semi-insulating GaAs wafer

Growth Method

VGF

Dopant

SI Type: Carbon

Wafer Shape

Round (DIA: 2", 3", 4", 6")

Surface Orientation *

(100)±0.5°

* Other Orientations maybe available upon request

Resistivity (Ω.cm)

≥ 1 × 107

≥ 1 × 108

Mobility (cm2/V.S)

≥ 5,000

≥ 4,000

Etch Pitch Density (cm2)

1,500-5,000

1,500-5,000

Wafer Diameter (mm)

50.8±0.3

76.2±0.3

100±0.3

150±0.3

Thickness (µm)

350±25

625±25

625±25

675±25

TTV [P/P] (µm)

≤ 4

≤ 4

≤ 4

≤ 4

TTV [P/E] (µm)

≤ 10

≤ 10

≤ 10

≤ 10

WARP (µm)

≤ 10

≤ 10

≤ 10

≤ 15

OF (mm)

17±1

22±1

32.5±1

NOTCH

OF / IF (mm)

7±1

12±1

18±1

N/A

Polish*

E/E,
P/E,
P/P

E/E,
P/E,
P/P

E/E,
P/E,
P/P

E/E,
P/E,
P/P


2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg
Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on Alibaba and etc..
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics
Q: Do you have inspection report for material?
We can supply detail report for our products.

Packaging – Logistcs
we concern each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product ,
we will take a different packaging process!

































Product tags

led semiconductor

,

semiconductor led

,

aluminium pcb board led
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2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED

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Product Detail
Brand Name :
zmkj
Model Number :
4inch SEMI
Place of Origin :
CHINA
MOQ :
5pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Contact Supplier
2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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