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2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
Specifications
Brand Name :
zmkj
Model Number :
GaAs-N-4inch
Place of Origin :
CHINA
MOQ :
5pcs
Price :
100-200usd/pcs
Payment Terms :
T/T, Western Union
Supply Ability :
2000pcs per month
Delivery Time :
2-4weeks
Packaging Details :
in single or 25pcs cassette wafer case by vacuum package
Material :
GaAs Crystal
Method :
VGF
size :
4inch dia100mm
thickess :
380um
Surface :
DSP
Application :
led,ld Device
Description



VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type
Semi-insulating type for Microelectronics,

--------------------------------------------------------------------------------------------------------------
(GaAs) Gallium Arsenide Wafers
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor
with a Zinc blende crystal structure.
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic
microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.[2]

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide,
aluminum gallium arsenide and others.

.
GaAs Wafer Feature and Application

FeatureApplication field
High electron mobilityLight emitting diodes
High frequencyLaser diodes
High conversion efficiencyPhotovoltaic devices
Low power consumptionHigh Electron Mobility Transistor
Direct band gapHeterojunction Bipolar Transistor


2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
Specification
Undoped GaAs
Semi-Insulating GaAs Specifications

Growth MethodVGF
DopantCarbon
Wafer Shape*Round (DIA: 2", 3", 4", and 6")
Surface Orientation**(100)±0.5°

*5" Wafers available upon request
**Other Orientations maybe available upon request

Resistivity (Ω.cm)≥1 × 107≥1 × 108
Mobility (cm2/V.S)≥ 5,000≥ 4,000
Etch Pitch Density (cm2)1,500-5,0001,500-5,000

Wafer Diameter (mm)50.8±0.376.2±0.3100±0.3150±0.3
Thickness (µm)350±25625±25625±25675±25
TTV [P/P] (µm)≤ 4≤ 4≤ 4≤ 4
TTV [P/E] (µm)≤ 10≤ 10≤ 10≤ 10
WARP (µm)≤10≤10≤10≤5
OF (mm)17±122±132.5±1NOTCH
OF / IF (mm)7±112±118±1N/A
Polish*E/E, P/E, P/PE/E, P/E, P/PE/E, P/E, P/PE/E, P/E, P/P

*E=Etched, P=Polished

Related Products for inventory list
2 inch SI-Dopant N-Type Gallium Arsenide wafer, SSP/DSP
LED/LD Applications
4 inch SI-Dopant N-Type Gallium Arsenide wafer, SSP/DSP
LED/LD Applications
6 inch SI-Dopant N-Type Gallium Arsenide wafer, SSP/DSP
LED/LD Applications
2 inch Undoped Gallium Arsenide wafer, SSP/DSP
Microelectronics Applications
4 inch Undoped Gallium Arsenide wafer, SSP/DSP
Microelectronics Applications
6 inch Undoped Gallium Arsenide wafer, SSP/DSP
Microelectronics Applications


Package ＆ Delivery
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
FAQ & CONTACT
This is Eric wang, sales manager of zmkj, our company located in Shanghai, China. Our service time is all time from Monday - Saturday. We are sorry for the inconvenience caused by time difference. If any questions, you can leave my E-mail a message and also add my WeChat,whats app, Skype, I will be online. Welcome to contact me!

Q: Are you trading company or manufacturer ?A: We have our own for wafer fabricating.
Q: How long is your delivery time? A: Generally it is 1-5 days if the goods are in stock,if not,it is for 2-3weeks
Q: Do you provide samples ? is it free or extra ? A: Yes, we could offer free sample by some size.
Q: What is your terms of payment ? A: for the first bussiness is 100％ before delivery.

Our Service

1.Prompt Delivery: in 1-3 days.
2.Quality Guarantee: If any quality problems, free replacement will be adopted.
3.Technical Support: 24 hours technical support by e-mail or calling
4.FAQ Email help: 2 hours in workday, 12 hours in weekend.
5.Covenient Payment.: We accept the Bank Transfer, L/C, Western Union, PayPal, Escrow, etc.

1.How about the payment?












































Product tags

smd led chip types

,

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,

cob smd led chip
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2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED

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Product Detail
Brand Name :
zmkj
Model Number :
GaAs-N-4inch
Place of Origin :
CHINA
MOQ :
5pcs
Price :
100-200usd/pcs
Payment Terms :
T/T, Western Union
Contact Supplier
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED
2'' N Semi Semiconductor Substrate Si Dopant Gallium Arsenide GaAs DSP/SSP Wafer LD/LED

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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