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2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface
2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface
2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface
2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface
2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface
2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface
2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface
2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface
Specifications
Brand Name :
zmkj
Model Number :
2inch
Place of Origin :
china
MOQ :
5PCS
Price :
BY CASE
Payment Terms :
T/T, Western Union, MoneyGram
Supply Ability :
100pcs
Delivery Time :
2-4weeks
Packaging Details :
single wafer box
material :
99.99％ purity single crystal
orientation :
111
size :
2inch
surface :
lapped
thickness :
300um
application :
electronic and optoelectronic industry
growth method :
LEC
Description

2-6 inch Gallium phosphide (GaP) crystals crystal substrate,GaP wafer

ZMKJ can provides 2inch GaP wafer – gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26eV(300K). The polycrystalline material has the appearance of pale orange pieces. Undoped single crystal wafers appear clear orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water.Sulfur or tellurium are used as dopants to produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor.Gallium phosphide has applications in optical systems. Its refractive index is between 4.30 at 262 nm (UV), 3.45 at 550 nm (green) and 3.19 at 840 nm (IR).

high quality single crystal GaP wafer ( Gallium phosphide ) to electronic and optoelectronic industry in diameter up to 2 inch . Gallium phosphide ( GaP ) crystal is an orange-yellow semi-translucent material formed by two elements , GaP wafer is an important semiconductor material which have unique electrical properties as other III-V compound materials and is widely used as red , yellow , and green LED ( light-emitting diodes ) . We have as-cut single crystal GaP wafer for your LPE application , and also provide epi ready grade GaP wafer for your MOCVD & MBE epitaxial application . Please contact us for more product information .

Electrical and Doping Specification

Product Name: Gallium phosphide (GaP) crystal substrate

Technical parameters:
Crystal structure Cubic a = 5.4505 Å
Growth method Czochralski method
Density 4.13 g / cm 3
Mp 1480 o C 1
Thermal expansion coefficient 5.3 x10 -6 / O C
Dopant S-doped undoped
Direction <111> or <100> <100> or <111>
Type N N
Thermal Conductivity 2 ~ 8 x10 17 / cm 3 4 ~ 6 x10 16 / cm 3
Resistivity W.cm 0.03 to 0.3
EPD (cm -2) <3x10 5 <3x10 5
Specifications:

Crystallographic directions: <111>, <100> ± 0.5 o

Standard polished Size: Ø2 "* 0.35mm; Ø2" * 0.43mm. Ø3"x0.3mm
Note: according to customer requirements with special dimensions and orientation substrates
StandardPacking 1000 clean room, 100 clean bag or single box packaging

Dopant available S / Zn / Cr / Undoped
Type of conductivity N / P ,Semi-conducting / Semi-insulating
Concentration 1E17 - 2E18 cm-3
Mobility > 100 cm2 / v.s.

Product Specification

Growth LEC
Diameter Ø 2"
Thickness 300um
Orientation <100> / <111> / <110> or others
Off orientation Off 2° to 10°
Surface One side polished or two sides polished or lapped
Flat options EJ or SEMI. Std .
TTV <= 10 um
EPD <= 2E5 cm-2
Grade Epi polished grade / mechanical grade
Package Single wafer container

Sample pictures

2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface

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sic wafers customzied/ standard sapphire wafers

FAQ:

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 3pcs.

(2) For customized products, the MOQ is 10-20pcs up.

Product tags

fr4 pcb thin

,

ceramic substrate trace width

,

si wafer thickness
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2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface

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Product Detail
Brand Name :
zmkj
Model Number :
2inch
Place of Origin :
china
MOQ :
5PCS
Price :
BY CASE
Payment Terms :
T/T, Western Union, MoneyGram
Contact Supplier
2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface
2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface
2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface
2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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