2inch R-axis sapphire wafer for epi-ready test ,sapphire optical windows, R-axis 2inch sapphire epi-ready substrate
Diameter:50.8±0.1mm
Thickness :430±15um or 330±15um
Primary flat:16±1mm
OF Orientation flat: Off R to C axis 45°±0.1° C-plane(0001)
Frontside Surface Roughness:Ra<0.2nm
Backside Surface Roughness: 0.8~1.2um ( Or double side polished, both side Ra<0.2nm)
TTV:<10um BOW:-10~0um WARP:<10um
Laser Mark Series No. by needs
Package:Vacuum-sealed containers with nitrogen backfill in a class 100 environment
Cleanliness :Free visible contamination
Item | GaN-FS-A-U/N/SI-S | GaN-FS-M-U/N/SI-S | GaN-FS-SP-U/N/SI-S | ||||
Dimensions | 5.0~10.0× 10.0 mm2 | ||||||
5.0~10.0× 20.0 mm2 | |||||||
Thickness | 350 ±25 μm | ||||||
(11-20) | (1-100) | (20-21) | |||||
(20-2-1) (11-22) (10-11) | |||||||
Orientation | |||||||
TTV(Total Thickness Variation) | ≤ 10 μm | ||||||
BOW | ≤ 10 μm | ||||||
ConductionType Resistivity(300K) | N-type < 0.1 Ω·cm | ||||||
N-type < 0.05 Ω·cm | |||||||
Semi-Insulating(Fe-doped) > 106 Ω·cm | |||||||
Dislocation Density | From 1x105 to 3x106 cm-2 | ||||||
Useable Surface Area | > 90% | ||||||
Polishing | Front Surface: Ra < 0.2 nm (polished) | ||||||
Back Surface: 1~3 nm (fine ground); option: < 0.2 nm (polished) | |||||||
Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. |
2. QC Standard
3. FAQ:
1. Can you accept OEM?
Yes!.We can manufacture as per your request specification.
2. Can you deliver the goods via our shipping agent?
Yes, we could help you make the delivery using your shipping agent
3. What about your After-sales service?
Yes.We promise that we can change or refund products if there are any quality problem.
If you need more professional help, please contact us. Our technical engineers
would like to give advices according to your requirements