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Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT
Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT
Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT
Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT
Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT
Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT
Specifications
Brand Name :
zmkj
Model Number :
6inch S-C-N
Place of Origin :
CHINA
MOQ :
5pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Supply Ability :
500pcs per month
Delivery Time :
2-4weeks
Packaging Details :
single wafer packed in 6"plastic box under N2
Material :
GaAs single crystal
SIZE :
6INCH
thickness :
650um or customzied
OF type :
notch or OF Flat
Orientation :
（100）2°off
Surface :
DSP
Growth method :
VFG
Description

2inch/3inch /4inch /6inch S-C-N Type Si-doped Gallium arsenide GaAs Wafer

Product Description

(GaAs) Gallium Arsenide Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

  • 1. Mainly used in electronics, low temperature alloys, Gallium Arsenide.
  • 2. The primary chemical compound of gallium in electronics, is used in microwave circuits, high-speed switching circuits, and infrared circuits.
  • 3. Gallium Nitride and Indium Gallium Nitride, for semiconductor uses, produce blue and violet light-emitting diodes (LEDs) and diode lasers.
Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT
PRODUCT DESCRIPTION
SPECIFICATION --6 inch SI-Dopant N-Type SSP/DSP LED/LD Gallium Arsenide wafer
Growth method
VGF
Orientation
<100>
Diameter
150.0 +/- 0.3 mm
Thickness
650um +/- 25um
Polish
Single sided polished (SSP)
Surface Roughness
Polished
TTV/Bow
<10um /<10um
Dopant
Si
Conductivity type
N-type
Resistivity(at RT)
(1.2~9.9)*10-3 ohm cm
Etch Pit Density(EPD)
LED <5000 /cm2 ; LD <500 /cm2
Mobility
LED >1000 cm2/v.s ; LD >1500 cm2/v.s
Carrier Concentration
LED >(0.4-4)*1018 /cm3 ; LD >(0.4-2.5)*1018 /cm3

Specifications of semi-conducting GaAs wafer

Growth Method

VGF

Dopant

p-type: Zn

n-type: Si

Wafer Shape

Round (DIA: 2", 3", 4", 6")

Surface Orientation *

(100)±0.5°

* Other Orientations maybe available upon request

Dopant

Si (n-type)

Zn (p-type)

Carrier Concentration (cm-3)

( 0.8-4) × 1018

( 0.5-5) × 1019

Mobility (cm2/V.S.)

( 1-2.5) × 103

50-120

Etch Pitch Density (cm2)

100-5000

3,000-5,000

Wafer Diameter (mm)

50.8±0.3

76.2±0.3

100±0.3

Thickness (µm)

350±25

625±25

625±25

TTV [P/P] (µm)

≤ 4

≤ 4

≤ 4

TTV [P/E] (µm)

≤ 10

≤ 10

≤ 10

WARP (µm)

≤ 10

≤ 10

≤ 10

OF (mm)

17±1

22±1

32.5±1

OF / IF (mm)

7±1

12±1

18±1

Polish*

E/E,

P/E,

P/P

E/E,

P/E,

P/P

E/E,

P/E,

P/P

Specifications of semi-insulating GaAs wafer

Growth Method

VGF

Dopant

SI Type: Carbon

Wafer Shape

Round (DIA: 2", 3", 4", 6")

Surface Orientation *

(100)±0.5°

* Other Orientations maybe available upon request

Resistivity (Ω.cm)

≥ 1 × 107

≥ 1 × 108

Mobility (cm2/V.S)

≥ 5,000

≥ 4,000

Etch Pitch Density (cm2)

1,500-5,000

1,500-5,000

Wafer Diameter (mm)

50.8±0.3

76.2±0.3

100±0.3

150±0.3

Thickness (µm)

350±25

625±25

625±25

675±25

TTV [P/P] (µm)

≤ 4

≤ 4

≤ 4

≤ 4

TTV [P/E] (µm)

≤ 10

≤ 10

≤ 10

≤ 10

WARP (µm)

≤ 10

≤ 10

≤ 10

≤ 15

OF (mm)

17±1

22±1

32.5±1

NOTCH

OF / IF (mm)

7±1

12±1

18±1

N/A

Polish*

E/E,

P/E,

P/P

E/E,

P/E,

P/P

E/E,

P/E,

P/P

E/E,

P/E,

P/P

Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT

FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as ball lens, powell lens and collimator lens:
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
(2) For the off-standard products, the delivery is 2 or 6 workweeks after you place the order.

Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on Alibaba and etc..

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics

Q: Do you have inspection report for material?
We can supply detail report for our products.

Packaging – Logistcs
we concern each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product ,

we will take a different packaging process!

Product tags

gaas wafer

,

gaas substrate

,

rf semiconductor
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Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT

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Product Detail
Brand Name :
zmkj
Model Number :
6inch S-C-N
Place of Origin :
CHINA
MOQ :
5pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Contact Supplier
Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT
Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT
Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Synthetic Gem Stone, Doped Sapphire Crystal
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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