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Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC
Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC
Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC
Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC
Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC
Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC
Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC
Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC
Specifications
Brand Name :
zmkj
Model Number :
GaN-FS-C-U-C50-SSP
Place of Origin :
CHINA
MOQ :
1pcs
Price :
1000~3000usd/pc
Payment Terms :
T/T
Supply Ability :
50pcs per month
Delivery Time :
1-5weeks
Packaging Details :
single wafer case by vacuum package
Material :
GaN single crystal
size :
2INCH 4inch
thickness :
0.4mm
type :
N-type/Un-doped si-doped semi-type
Application :
semiconductor Device
application :
Powder device
surface :
SSP
Package :
single wafer container box
Description

2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)

4inch 2inch free-standing GaN substrates HVPE GaN Wafers

GaN Wafer Characteristic

  1. III-Nitride(GaN,AlN,InN)

Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.

Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.

Application

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.

  • Laser Projection Display, Power Device, etc. Date storage
  • Energy-efficient lighting Full color fla display
  • Laser Projecttions High- Efficiency Electronic devices
  • High- Frequency Microwave Devices High-energy Detection and imagine
  • New energy solor hydrogen technology Environment Detection and biological medicine
  • Light source terahertz band

Specification for free-standing GaN wafers

Size 2" 4"
Diameter 50.8 mm 士 0.3 mm 100.0 mm 士 0.3 mm
Thickness 400 um 士 30 um 450 um 士 30 um
Orientation (0001) Ga-face c-plane (standard); (000-1) N-face (optional)
002 XRD Rocking Curve FWHM < 100 arcsec
102 XRD Rocking Curve FWHM < 100 arcsec
Lattice Radius of Curvature > 10 m (measured at 80% x diameter)
Offcut Toward m-plane 0.5° ± 0.15° toward [10-10] @ wafer center
Offcut Toward Orthogonal a-plane 0.0° ± 0.15° toward [1-210] @ wafer center
Offcut In-Plane Direction The c-plane vector projection points toward the major OF
Major Orientation Flat Plane (10-10) m-plane 2° (standard); ±0.1° (optional)
Major Orientation Flat Length 16.0 mm ±1 mm 32.0 mm ± 1 mm
Minor Orientation Flat Orientation Ga-face = major OF on bottom and minor OF on left
Minor Orientation Flat Length 8.0 mm ± 1 mm 18.0 mm ± 1 mm
Edge Bevel beveled
TTV (5 mm edge exclusion) < 15 um < 30 um
Warp (5 mm edge exclusion) < 20 um < 80 um
Bow (5 mm edge exclusion) -10 um to +5 um -40 um to +20 um
Front Side Roughness (Sa) < 0.3 nm (AFM: 10 um x 10 um area)
< 1.5 nm (WLI: 239 um x 318 um area)
Back Side Surface Finish polished (standard); etch (optional)
Back Side Roughness (Sa) polished: < 3 nm (WLI: 239 um x 318 um area)
etched: 1 um ± 0.5 um (WLI: 239 um x 318 um area)
Laser Mark back side on major flat
Electrical Properties Doping Resistivity
N-type ⑸ licon) < 0.02 ohm-cm
UID < 0.2 ohm-cm
Semi-Insulating (Carbon) > 1E8 ohm-cm
Pits Grading System Density (pits/cm2) 2" (pits) 4" (pits)
Production < 0.5 < 10 < 40
Research < 1.5 < 30 < 120
Dummy < 2.5 < 50 < 200

Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC

Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiCFree Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC

ABOUT OUR OEM Factory

Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC

Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.

-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100％T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-10pcs.
It depends on quantity and technics.

Q: Do you have inspection report for material?
We can supply ROHS report and reach reports for our products.

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Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC

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Product Detail
Brand Name :
zmkj
Model Number :
GaN-FS-C-U-C50-SSP
Place of Origin :
CHINA
MOQ :
1pcs
Price :
1000~3000usd/pc
Payment Terms :
T/T
Contact Supplier
Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC
Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC
Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC
Free Standing GaN Substrates HVPE GaN Wafers Powder device GaN-On-Sapphire GaN-On-SiC

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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