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8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
Specifications
Brand Name :
ZMKJ
Model Number :
8inch sic wafers 4h-n
Place of Origin :
CHINA
MOQ :
1pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Supply Ability :
1-50pcs/month
Delivery Time :
1-6weeks
Packaging Details :
single wafer package in 100-grade cleaning room
Certification :
ROHS
Material :
SiC single crystal 4H-N type
Grade :
Dummy /Production grade
Thicnkss :
0.35mm 0.5mm
Suraface :
double side polished
Application :
device maker polishing test
Diameter :
200±0.5mm
Description

Custom Size Ceramic Substrate / Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon Carbide SiC Wafer4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65
Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K
Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor

Physical & Electronic Properties of

Wide Energy Bandgap (eV)

4H-SiC: 3.26 6H-SiC: 3.03 GaAs: 1.43 Si: 1.12

Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects because of the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabrication of blue light emitting diodes and nearly solar blind UV photodetectors possible.

High Breakdown Electric Field [V/cm (for 1000 V operation)]

4H-SiC: 2.2 x 106* 6H-SiC: 2.4 x 106* GaAs: 3 x 105 Si: 2.5 x 105

SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage, high-power devices such as diodes, power transitors, power thyristors and surge suppressors, as well as high power microwave devices. Additionally, it allows the devices to be placed very close together, providing high device packing density for integrated circuits.

High Thermal Conductivity (W/cm · K @ RT)


4H-SiC: 3.0-3.8 6H-SiC: 3.0-3.8 GaAs: 0.5 Si: 1.5

SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess heat generated.

High Saturated Electron Drift Velocity [cm/sec (@ E ≥ 2 x 105 V/cm)]

Product show:

4H-SiC: 2.0 x 107 6H-SiC: 2.0 x 107 GaAs: 1.0 x 107 Si: 1.0 x 107
SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC.

8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor

About ZMKJ Company

ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) it is fine If you have your own express account ,If not,we could help you ship them and

Freight is in accordance with the actual settlement.

Q: How to pay?

A: T/T 100％ deposit before delivery.

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.

(2) For customized commen products, the MOQ is 10pcs up.

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 -4 weeks after you order contact.

Q: Do you have standard products?

A: Our standard products in stock. as like substrates 4inch 0.35mm.

Product tags

silicon carbide polishing compound

,

silicon carbide wafer

,

preparation of silicon carbide
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8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor

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Product Detail
Brand Name :
ZMKJ
Model Number :
8inch sic wafers 4h-n
Place of Origin :
CHINA
MOQ :
1pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Contact Supplier
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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