6 inch High-purity Semi-insulating 4H-SiC Substrates Specifications
Doped 4h-Semi high purity customized size Sic ceramic crystal rod Lens diameter2mm 10mm length High Precision 1mm 2mm 3mm 4mm 5mm 6mm 24mm Etc Silicon Carbide Ceramic Ball For Bearing Sic Beads Industrial Customized Black SiC Silicon carbide Ceramic Plates
6 inch High-purity Semi-insulating 4H-SiC Substrates Specifications
Property | UfUhni) Grade | P (Produeben) Grade | R (Research) Grade | D (Dummy〉Grade | |
Diameter | 150.0 mmHJ.25 mm | |||
Surface Oncniation | {0001} ±0.2. | |||
Primary Flat Orientalicn | <ll-20>±5.0# | |||
Secondary Hat OrientaUen | N>A | |||
Primary Flat Length | 47.5 mm ±1.5 mm | |||
Secondary flat Length | None | |||
Wa 知 Edge | Chamfer | |||
Micropipc Density | <1 knr <5 /cm2 | <10/cm2 | <50/cm2 | |
Poljlypc area by High-imcnsity Light | None | < 10% | ||
Resist! vit), | >lE7Hcm | (area 75%) >lE7D cm | ||
Thickness | 350.0 pm ± 25.0 jim or 500.0 呻 ± 25.C pm | |||
TTV | S 10 pm | |||
Bou<Absolute Value) | =40 pm | |||
Warp | -60 pm | |||
Surface Finish | C-focc: Optical polished, Si-focc: CMP | |||
Roughncss(lC UmXIOu m) | CMP Si-bee Ra<C,5 nm | N/A | ||
Crack by High-intcnsity* Light | None | |||
Edge Chips/lndcnts by Diffuse Lighting | None | Qly<2, tbc length and width of each V 1 mm | ||
Effective Area | >90% | >8C% | N/A | |
About ZMKJ Company
ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .