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2 Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC
2 Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC
2 Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC
2 Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC
Specifications
Brand Name :
ZMKJ
Model Number :
4inch GaN-sapphire
Place of Origin :
China
MOQ :
2pcs
Price :
by case
Payment Terms :
T/T, Western Union, paypal
Supply Ability :
50pcs/month
Delivery Time :
in 20days
Packaging Details :
single wafer container in cleaning room
substrate :
GaN-On-Sapphire
layer :
GaN template
layer thickness :
1-5um
conductivity type :
N/P
Orientation :
0001
application :
high power/high frequency electronic devices
application 2 :
5G saw/BAW Devices
silicon thickness :
525um/625um/725um
Description

2inch 4inch 4" 2'' Sapphire based GaN templates GaN film on the sapphire substrate GaN-On-Sapphire GaN wafers GaN substrates GaN windows

Properties of GaN

1) At room temperature, GaN is insoluble in water, acid and alkali.

2)Dissolved in a hot alkaline solution at a very slow rate.

3) NaOH, H2SO4 and H3PO4 can quickly corrode the poor quality of GaN, can be used for these poor quality GaN crystal defect detection.

4) GaN in the HCL or hydrogen, at high temperature presents unstable characteristics.

5) GaN is the most stable under nitrogen.

Electrical properties of GaN

1) The electrical properties of GaN are the most important factors affecting the device.

2) The GaN with no doping was n in all the cases, and the electron concentration of the best sample was about 4*(10^16)/c㎡.

3) Generally, the prepared P samples are highly compensated.

Optical Properties Of GaN

1) Wide band gap compound semiconductor material with high band width (2.3~6.2eV), can cover the red yellow green, blue, violet and ultraviolet spectrum, so far is that any other semiconductor materials are unable to achieve.

2) Mainly used in blue and violet light emitting device.

Properties of GaN Material

1) High frequency property, arrive at 300G Hz. (Si is 10G & GaAs is 80G)

2) High temperature property, Normal work at 300℃, very suitable for aerospace, military and other high temperature environment.

3) The electron drift has high saturation velocity, low dielectric constant and good thermal conductivity.

4) Acid and alkali resistance, corrosion resistance, can be used in harsh environment.

5) High voltage characteristics, impact resistance, high reliability.

6) Large power, the communication equipment is very eager.

Main Usage Of GaN

1) light emitting diodes, LED

2) field effect transistors, FET

3) laser diodes, LD

Specification
2 inch Blue/Green LED Epi. On Sapphire
Substrate
Type
Flat Sapphire
Polish
Single side polished (SSP) / Double side polished (DSP)
Dimension
100 ± 0.2 mm
Orientation
C plane (0001) off angle toward M-axis 0.2 ± 0.1°
Thickness
650 ± 25 μm
Epilayer
Structure (ultra-low current
design)
0.2μm pGaN/0.5μm MQWs/2.5μm nGaN/2.0μm uGaN
Thickness/std
5.5 ± 0.5μm/ <3%
Roughness (Ra)
<0.5 nm
Wavelength/std
Blue LED
Green LED
465 ± 10 nm/ < 1.5nm
525 ± 10 nm/ <2.0 nm
Wavelength FWHMs
< 20 nm
< 35 nm
Dislocation density
< 5×10^8 cm-²
Particles (>20μm)
< 4 pcs
Bow
< 50 μm
Chip Performance (Based on your chip technology, here for
reference,size<100μm)
Parameter
Peak EQE
Vfin@1μA
Vr@-10μA
Ir@-15V
ESDHM@2KV
Blue LED
> 30%
2.3-2.5V
> 40V
< 0.08μA
> 95%
Green LED
> 20%
2.2-2.4V
> 25V
< 0.1μA
> 95%
Useable Area
> 90% (edge and macro defects exclusion)
Package
Packaged in a cleanroom in a single wafer container

2

Crystal structure

Wurtzite
Lattice constant (Å) a=3.112, c=4.982
Conduction band type Direct bandgap
Density (g/cm3) 3.23
Surface microhardness (Knoop test) 800
Melting point (℃) 2750 (10-100 bar in N2)
Thermal conductivity (W/m·K) 320
Band gap energy (eV) 6.28
Electron mobility (V·s/cm2) 1100
Electric breakdown field (MV/cm) 11.7

22

Product tags

gan semiconductor

,

semiconductor design

,

standard tungsten carbide edges
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2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC

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Product Detail
Brand Name :
ZMKJ
Model Number :
4inch GaN-sapphire
Place of Origin :
China
MOQ :
2pcs
Price :
by case
Payment Terms :
T/T, Western Union, paypal
Contact Supplier
2 Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC
2 Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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