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30mm Dia AlN Single Crystal Semiconductor Substrate
30mm Dia AlN Single Crystal Semiconductor Substrate
30mm Dia AlN Single Crystal Semiconductor Substrate
30mm Dia AlN Single Crystal Semiconductor Substrate
Specifications
Brand Name :
ZMKJ
Model Number :
UTI-AlN-150
Place of Origin :
China
MOQ :
3pcs
Price :
by case
Payment Terms :
T/T, Western Union, paypal
Supply Ability :
50pcs/month
Delivery Time :
in 30days
Packaging Details :
single wafer container in cleaning room
substrate :
silicon wafer
layer :
AlN template
layer thickness :
200-1000nm
conductivity type :
N/P
Orientation :
0001
application :
high power/high frequency electronic devices
application 2 :
5G saw/BAW Devices
silicon thickness :
525um/625um/725um
Description

diameter 150mm 8inch 4inch 6inch Silicon-based AlN templates 500nm AlN film on silicon substrate

Applications of AlN template
Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future
electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, aluminum nitride (AlN) has
superior physical and chemical properties such as wide bandgap, high thermal conductivity, high breakdown filed,
high electronic mobility and corrosion/radiation resistance, and is a perfect substrate for optoelectronic devices,
radio frequency (RF) devices, high-power/high-frequency electronic devices, etc.. Particularly, AlN substrate is the
best candidate for UV-LED, UV detectors, UV lasers, 5G high-power/high-frequency RF devices and 5G SAW/BAW
devices, which could widely be used in environmental protection, electronics, wireless communications, printing,
biology, healthcare, military and other fields, such as UV purification/sterilization, UV curing, photocatalysis, coun
terfeit detection, high-density storage, medical phototherapy, drug discovery, wireless and secure communication,
aerospace/deep-space detection and other fields.
we have developed a serials of proprietary processes and technologies to fabricate
high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN
templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive
market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc
We currently provide customers with standardized 10x10mm/Φ10mm/Φ15mm/Φ20mm/Φ25.4mm/Φ30mm/Φ50.8mm high quality nitrogen
Aluminum single crystal substrate products, and can also provide customers with 10-20mm non-polar
M-plane aluminum nitride single crystal substrate, or customize non-standard 5mm-50.8mm to customers
Polished aluminum nitride single crystal substrate. This product is widely used as a high-end substrate material
Used in UVC-LED chips, UV detectors, UV lasers, and various high power
/High temperature/high frequency electronic device field.
Specification
Characteristic Specification
  • Model UTI-AlN-030B-single crystal
  • Diameter Dia30±0.5mm ；
  • Substrate thickness (µm) 400 ± 50
  • Orientation C-axis [0001] +/- 0.5°

Quality Grade S-grade(super) P-grade(production) R-grade(Research)

  • Cracks None None <3mm
  • FWHM-2θXRD@(0002) <150 <300 <500
  • FWHM-HRXRD@(10-12) <100 <200 <400
  • Surface Roughness [5×5µm] (nm) Al-face <0.5nm; N-face(back surface) <1.2um;
  • Usable area 90%
  • Absorbance <50 ； <70 ； <100；
  • 1st OF length orientation {10-10} ±5°；
  • TTV (µm) ≤30
  • Bow (µm) ≤30
  • Warp (µm) -30~30
  • Note: These characterization results may vary slightly depending on the equipments and/or software employed
30mm Dia AlN Single Crystal Semiconductor Substrate

30mm Dia AlN Single Crystal Semiconductor Substrate

30mm Dia AlN Single Crystal Semiconductor Substrate

30mm Dia AlN Single Crystal Semiconductor Substrate

30mm Dia AlN Single Crystal Semiconductor Substrate

impurity element C O Si B Na W P S Ti Fe
PPMW 27 90 5.4 0.92 0.23 <0.1 <0.1 <0.5 0.46 <0.5
Crystal structure

Wurtzite
Lattice constant (Å) a=3.112, c=4.982
Conduction band type Direct bandgap
Density (g/cm3) 3.23
Surface microhardness (Knoop test) 800
Melting point (℃) 2750 (10-100 bar in N2)
Thermal conductivity (W/m·K) 320
Band gap energy (eV) 6.28
Electron mobility (V·s/cm2) 1100
Electric breakdown field (MV/cm) 11.7

Product tags

alumina pcb substrate

,

al2o3 substrate

,

hexagonal boron nitride
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30mm Dia AlN Single Crystal Semiconductor Substrate

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Product Detail
Brand Name :
ZMKJ
Model Number :
UTI-AlN-150
Place of Origin :
China
MOQ :
3pcs
Price :
by case
Payment Terms :
T/T, Western Union, paypal
Contact Supplier
30mm Dia AlN Single Crystal Semiconductor Substrate
30mm Dia AlN Single Crystal Semiconductor Substrate

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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