Specifications
Brand Name :
ZMKJ
Model Number :
2inch AlN-sapphire
Place of Origin :
China
MOQ :
5pcs
Price :
by case
Payment Terms :
T/T, Western Union, paypal
Supply Ability :
50pcs/month
Delivery Time :
in 30days
Packaging Details :
single wafer container in cleaning room
substrate :
sapphire wafer
layer :
AlN template
layer thickness :
1-5um
conductivity type :
N/P
Orientation :
0001
application :
high power/high frequency electronic devices
application 2 :
5G saw/BAW Devices
silicon thickness :
525um/625um/725um
Description

2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate

2inch on sapphire substrate AlN Template layer Wafer For 5G BAW Devices

Applications of AlN template
Our OEM has developed a serials of proprietary technologies and the-state-of-the art PVT growth reactors and facilities to
fabricate different sizes of high-quality single crystalline AlN wafers, AlN temlpates. We are one of the few world-leading
high-tech companies who own full AlN fabrication capabilities to produce high-quality AlN boules and wafers, and provide
professional services and turn-key solutions to our customers,arranged from the growth reactor and hotzone design,
modeling and simulation, process design and optimization, crystal growth,
wafering and material characterization. Up to April 2019, they have applied more than 27 patents (including PCT).
Specification
Ch2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devicesaracteristic Specification

Other relaterd 4INCH GaN Template Specification

GaN/ Al₂O₃ Substrates (4") 4inch
Item Un-doped N-type

High-doped

N-type

Size (mm) Φ100.0±0.5 (4")
Substrate Structure GaN on Sapphire(0001)
SurfaceFinished (Standard: SSP Option: DSP)
Thickness (μm) 4.5±0.5; 20±2;Customized
Conduction Type Un-doped N-type High-doped N-type
Resistivity (Ω·cm)(300K) ≤0.5 ≤0.05 ≤0.01
GaN Thickness Uniformity
≤±10% (4")
Dislocation Density (cm-2)
≤5×108
Useable Surface Area >90%
Package Packaged in a class 100 clean room environment.

2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices

Crystal structure

Wurtzite

Lattice constant (Å) a=3.112, c=4.982
Conduction band type Direct bandgap
Density (g/cm3) 3.23
Surface microhardness (Knoop test) 800
Melting point (℃) 2750 (10-100 bar in N2)
Thermal conductivity (W/m·K) 320
Band gap energy (eV) 6.28
Electron mobility (V·s/cm2) 1100
Electric breakdown field (MV/cm) 11.7

2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices

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2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices

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Brand Name :
ZMKJ
Model Number :
2inch AlN-sapphire
Place of Origin :
China
MOQ :
5pcs
Price :
by case
Payment Terms :
T/T, Western Union, paypal
Contact Supplier
2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices
2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices
2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices
2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices
2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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