2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate
2inch on sapphire substrate AlN Template layer Wafer For 5G BAW Devices
Other relaterd 4INCH GaN Template Specification
GaN/ Al₂O₃ Substrates (4") 4inch | |||
Item | Un-doped | N-type | High-doped N-type |
Size (mm) | Φ100.0±0.5 (4") | ||
Substrate Structure | GaN on Sapphire(0001) | ||
SurfaceFinished | (Standard: SSP Option: DSP) | ||
Thickness (μm) | 4.5±0.5; 20±2;Customized | ||
Conduction Type | Un-doped | N-type | High-doped N-type |
Resistivity (Ω·cm)(300K) | ≤0.5 | ≤0.05 | ≤0.01 |
GaN Thickness Uniformity | ≤±10% (4") | ||
Dislocation Density (cm-2) | ≤5×108 | ||
Useable Surface Area | >90% | ||
Package | Packaged in a class 100 clean room environment. |
Crystal structure | Wurtzite |
Lattice constant (Å) | a=3.112, c=4.982 |
Conduction band type | Direct bandgap |
Density (g/cm3) | 3.23 |
Surface microhardness (Knoop test) | 800 |
Melting point (℃) | 2750 (10-100 bar in N2) |
Thermal conductivity (W/m·K) | 320 |
Band gap energy (eV) | 6.28 |
Electron mobility (V·s/cm2) | 1100 |
Electric breakdown field (MV/cm) | 11.7 |