Specifications
Brand Name :
zmkj
Model Number :
8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer
Place of Origin :
CHINA
MOQ :
1pcs
Price :
1200~2500usd/pc
Payment Terms :
T/T
Supply Ability :
50pcs per month
Delivery Time :
1-5weeks
Packaging Details :
single wafer case by vacuum package
Material :
GaN layer on sI Substrate
size :
8inch/6inch
GaN thickness :
2-5um
type :
N-type
Application :
semiconductor Device
Description

8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED for RF application

GaN Wafer Characteristic

  1. III-Nitride(GaN,AlN,InN)

Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.

Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.

Application

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.

  • Laser Projection Display, Power Device, etc. Date storage
  • Energy-efficient lighting Full color fla display
  • Laser Projecttions High- Efficiency Electronic devices
  • High- Frequency Microwave Devices High-energy Detection and imagine
  • New energy solor hydrogen technology Environment Detection and biological medicine
  • Light source terahertz band

8 Inch AlGaN/GaN Gallium Nitride Wafer For Micro LED

Product specification

Items Values/Scope
Substrate Si
Wafer diameter 4” / 6” / 8
Epi-layer thickness 4-5 μm
Wafer bow <30 μm, Typical
Surface Morphology RMS<0.5nm in 5×5 μm²
Barrier AlXGa1-XN, 0<X<1
Cap layer In-situ SiN or GaN (D-mode); p-GaN (E-mode)
2DEG density >9E12/cm2 (20nm Al0.25GaN)
Electron mobility >1800 cm2/Vs (20nm Al0.25GaN)

8 Inch AlGaN/GaN Gallium Nitride Wafer For Micro LED

Prodcut Specification

Items Values/Scope
Substrate HR_Si / SiC
Wafer diameter 4’’/6’’ for SiC, 4”/ 6”/ 8” for HR_Si
Epi-layer thickness 2-3 μm
Wafer bow <30 μm, Typical
Surface Morphology RMS<0.5nm in 5×5 μm²
Barrier AlGaN or AlN or InAlN
Cap layer In-situ SiN or GaN

8 Inch AlGaN/GaN Gallium Nitride Wafer For Micro LED

Items GaN-on-Si GaN-on-Sapphire
4”/ 6”/ 8 2”/ 4”/ 6”
Epi-layer Thickness <4 μm <7 μm
Average Dominant/ Peak Wavelength 400-420nm, 440-460nm, 510-530nm 270-280nm, 440-460nm, 510-530nm
FWHM

<20nm for Blue/Near-UV

<40nm for Green

<15nm for UVC

<25nm for Blue

<40nm for Green

Wafer Bow <50 μm <180 μm

ABOUT OUR OEM Factory

8 Inch AlGaN/GaN Gallium Nitride Wafer For Micro LED

Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.

-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100%T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-10pcs.
It depends on quantity and technics.

Q: Do you have inspection report for material?
We can supply ROHS report and reach reports for our products.

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8 Inch AlGaN/GaN Gallium Nitride Wafer For Micro LED

Ask Latest Price
Brand Name :
zmkj
Model Number :
8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer
Place of Origin :
CHINA
MOQ :
1pcs
Price :
1200~2500usd/pc
Payment Terms :
T/T
Contact Supplier
8 Inch AlGaN/GaN Gallium Nitride Wafer For Micro LED
8 Inch AlGaN/GaN Gallium Nitride Wafer For Micro LED
8 Inch AlGaN/GaN Gallium Nitride Wafer For Micro LED
8 Inch AlGaN/GaN Gallium Nitride Wafer For Micro LED

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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