Silicon Carbide Wafers 3C-N type 5*5 & 10*10mm inch diameter thickness 350 μm±25 μm

Silicon Carbide Wafers 3C-N type's abstract

This abstract introduces Silicon Carbide (SiC) 3C-N type wafers, available in 5x5mm and 10x10mm sizes with a thickness of 350 μm ± 25 μm. These wafers are designed to meet the precise needs of high-performance applications in optoelectronics, power electronics, and AR technologies. With their superior thermal conductivity, mechanical strength, and electrical properties, SiC 3C-N wafers offer enhanced durability and heat dissipation, making them ideal for devices requiring high thermal stability and efficient energy management. The specified dimensions and thickness ensure compatibility across a wide range of advanced industrial and research applications.

Silicon Carbide Wafers 3C-N type's showcase

Silicon Carbide Wafers 3C-N type's properties & data chart

Material Type: 3C-N Silicon Carbide (SiC)

This crystalline form offers excellent mechanical and thermal properties, suitable for high-performance applications.

Size:

Available in two standard sizes: 5x5mm and 10x10mm.

Thickness:

Thickness: 350 μm ± 25 μm

Precision-controlled thickness ensures mechanical stability and compatibility with various device requirements.

Thermal Conductivity:

SiC exhibits superior thermal conductivity, allowing for efficient heat dissipation, making it ideal for applications requiring thermal management, such as AR glasses and power electronics.

Mechanical Strength:

SiC has a high hardness and mechanical strength, providing durability and resistance to wear and deformation, essential for demanding environments.

Electrical Properties:

SiC wafers possess high electrical breakdown voltage and low thermal expansion, which are crucial for high-power and high-frequency devices.

Optical Clarity:

SiC has excellent transparency in certain optical wavelengths, making it suitable for use in optoelectronic and AR technologies.

High Stability:

SiC's resistance to thermal and chemical stress ensures long-term reliability in harsh conditions.

These properties make SiC 3C-N type wafers highly versatile for use in advanced electronic and optoelectronic devices, as well as next-generation AR technologies.

5*5 & 10*10mm 英寸 SiC 晶片产品标准

5*5 & 10*10mm inch diameter Silicon Carbide (SiC)

Notes:

※Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

Silicon Carbide Wafers 3C-N type's applications

Silicon Carbide (SiC) wafers, specifically 3C-N type, are a variant of SiC that possesses unique characteristics due to its cubic crystal structure (3C-SiC). These wafers are primarily used in various high-performance and specialized applications due to their excellent properties, such as high thermal conductivity, wide bandgap, and strong mechanical strength. Some key applications of 3C-N type SiC wafers include:

1. Power Electronics

• High-voltage devices: SiC wafers are ideal for fabricating power devices such as MOSFETs, Schottky diodes, and IGBTs. These devices are used in high-voltage and high-temperature environments, such as electric vehicles (EVs), hybrid electric vehicles (HEVs), and renewable energy systems (like solar inverters).
• Efficient power conversion: SiC enables higher efficiency and reduced energy losses in power conversion systems, like DC-DC converters and motor drives.

2. High-Frequency Devices

• RF applications: 3C-SiC is suitable for RF and microwave applications, including radar systems, satellite communications, and 5G technology due to its high electron mobility.
• High-frequency amplifiers: Devices that operate in the GHz frequency range benefit from the low power dissipation and high thermal stability of 3C-SiC.

3. High-Temperature and Harsh Environment Sensors

• Temperature sensors: SiC wafers can be used in devices for extreme temperature environments, such as aerospace, automotive, and industrial processes.
• Pressure sensors: 3C-SiC is utilized in pressure sensors that must operate in extreme environments like deep-sea exploration or high-vacuum chambers.
• Chemical sensors: 3C-N SiC is chemically inert, making it useful in gas or chemical sensors for monitoring in corrosive environments.

4. LEDs and Optoelectronics

• Blue and UV LEDs: The wide bandgap of 3C-SiC makes it ideal for fabricating blue and ultraviolet light-emitting diodes (LEDs), used in display technologies, data storage (Blu-ray), and sterilization processes.
• Photodetectors: SiC wafers can be used in ultraviolet (UV) photodetectors for various applications, including flame detection, environmental monitoring, and astronomy.

5. Quantum Computing and Research

• Quantum devices: 3C-SiC is explored in quantum computing for developing spintronics and other quantum-based devices due to its unique defect properties that enable quantum information storage and processing.
• Material research: As 3C-SiC is a relatively less common polytype of SiC, it is used in research to explore its potential advantages over other SiC types (like 4H-SiC or 6H-SiC).

6. Aerospace and Defense

• Harsh environment electronics: SiC devices are crucial in aerospace and defense industries for applications such as power modules, radar systems, and satellite communications, where extreme conditions and reliability are key.
• Rugged electronics: The ability of SiC to withstand high radiation levels makes it ideal for use in space missions and military hardware.

In summary, 3C-N type SiC wafers are primarily used in power electronics, high-frequency devices, sensors for harsh environments, optoelectronics, quantum devices, and aerospace applications, where their unique properties such as wide bandgap, thermal stability, and high electron mobility provide significant advantages over traditional silicon-based materials.

Q&A

What is 3C silicon carbide?

3C Silicon Carbide (3C-SiC) is one of the polytypes of silicon carbide, characterized by its cubic crystal structure, distinguishing it from the more common hexagonal forms like 4H-SiC and 6H-SiC. The cubic lattice of 3C-SiC provides several notable benefits.

Firstly, 3C-SiC exhibits higher electron mobility, making it advantageous for high-frequency and power electronic devices, especially in applications requiring fast switching. Although its bandgap is lower (around 2.36 eV) compared to other SiC polytypes, it still performs well in high-voltage and high-power environments.

Additionally, 3C-SiC retains the high thermal conductivity and mechanical strength typical of silicon carbide, enabling it to operate in extreme conditions, such as high-temperature and high-stress environments. It also possesses good optical transparency, making it suitable for optoelectronic applications like LEDs and photodetectors.

As a result, 3C-SiC is widely used in power electronics, high-frequency devices, optoelectronics, and sensors, particularly in high-temperature and high-frequency scenarios, where its unique properties offer significant advantages.