SiC Wafer 4H N Type 8inch Production grade Dummy grade Customized Double side polished Silicon Carbide Wafer
Property | P Grade | D Grade | |
Crystal Form | 4H | ||
Polytype | None Permitted | Area≤5% | |
(MPD) a | ≤1/cm2 | ≤5/cm2 | |
Hex Plates | None Permitted | Area≤5% | |
Inclusions a | Area≤0.05% | N/A | |
Resistivity | 0.015Ω•cm—0.028Ω•cm | 0.014Ω•cm—0.028Ω•cm | |
(EPD)a | ≤8000/cm2 | N/A | |
(TED)a | ≤6000/cm² | N/A | |
(BPD)a | ≤2000/cm² | N/A | |
(TSD)a | ≤1000/cm² | N/A | |
Stacking Fault | ≤1% Area | N/A | |
Notch Orientation | <1-100>±1° | ||
Notch Angle | 90° +5°/-1° | ||
Notch Depth | 1.00mm+0.25mm/-0mm | ||
Orthogonal Misorientation | ±5.0° | ||
Surface Finish | C-Face: Optical Polish ,Si-Face: CMP | ||
Wafer Edge | Beveling | ||
Surface Roughness(10µm×10µm) | Si Face Ra≤0.2 nm ;C Face Ra≤0.5 nm | ||
LTV(10mm×10mm)a | ≤3µm | ≤5µm | |
(TTV)a | ≤10µm | ≤10µm | |
(BOW)a | ≤25µm | ≤40µm | |
(Warp)a | ≤40µm | ≤80µm |
1. Power Devices:
SiC wafers are extensively used in manufacturing power electronic devices such as power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), Schottky diodes, and power-integrated modules. Due to the advantages of high thermal conductivity, high breakdown voltage, and high electron mobility of SiC, these devices can achieve efficient and high-performance power conversion in high-temperature, high-voltage, and high-frequency environments.
2. Optoelectronic Devices:
SiC wafers play a crucial role in optoelectronic devices, being used to manufacture photodetectors, laser diodes, UV sources, among others. The superior optical and electronic properties of silicon carbide make it a preferred material, especially excelling in applications requiring high temperatures, frequencies, and power levels.
3. Radio Frequency (RF) Devices:
SiC wafers are also employed in the fabrication of RF devices such as RF power amplifiers, high-frequency switches, RF sensors, and more. The high thermal stability, high-frequency characteristics, and lower losses of SiC make it an ideal choice for RF applications like wireless communication and radar systems.
4. High-Temperature Electronics:
Due to its high thermal stability and temperature resilience, SiC wafers are used in the production of electronics designed to operate in high-temperature environments, including high-temperature power electronics, sensors, and controllers.
Q&A:
1. Q: What's the significance of high-quality silicon carbide wafers?
A: This is a crucial step in enabling the large-scale production of silicon carbide devices, meeting the semiconductor industry's demand for high-performance and highly reliable devices.
2. Q: How are silicon carbide wafers utilized in specific semiconductor applications such as power electronics and optoelectronics?
A: Silicon carbide wafers are utilized in power electronics for devices like power MOSFETs, Schottky diodes, and power modules due to their high thermal conductivity and voltage handling capabilities. In optoelectronics, SiC wafers are used for photodetectors, laser diodes, and UV sources because of their wide bandgap and high-temperature stability, enabling high-performance optoelectronic devices.
3. Q: What advantages does silicon carbide (SiC) offer over traditional silicon wafers in semiconductor applications?
A: Silicon carbide offers several advantages over traditional silicon wafers, including higher breakdown voltage, higher thermal conductivity, wider bandgap, and enhanced temperature stability. These properties make SiC wafers ideal for high-power, high-frequency, and high-temperature applications where traditional silicon wafers may not perform optimally.