6H Silicon Carbide Wafer Double Side Polished 2inch diameter TTV Bow Warp <0001>
Product Description:
There are many different polymorphs of silicon carbide and 6H silicon carbide is one among nearly 200 polymorphs. 6H silicon carbide is by far the most commonly occurring modifications of silicone carbides for commercial interests. 6H silicon carbide wafers are of paramount importance. They can be used as semiconductors. It is widely being used in abrasive and cutting tools such as cutting discs because of its durability and low costs of material. It is used in modern composite body armors and bulletproof vests. It is also used in the automobile industry where it is used to manufacture brake disks. In large foundry applications, it is used to hold melting metals in crucibles. Its use in electric and electronic applications is so well known that it doesn't require any debate. Moreover, it is used in power electronic devices, LEDs, astronomy, thin filament pyrometry, jewelry, graphene and steel production, and as a catalyst. We are offering 6H silicon carbide wafers with distinctive quality and staggering 99.99%.
Product Name | Silicon carbide substrate, Silicon carbide wafer, SiC wafer, SiC substrate |
Crystal Structure | 6H |
Lattice Parameters | 6H(a=3.073 Å c=15.117 Å), |
Stacking Sequence | 6H: ABCACB, |
Grade | Production Grade, Research Grade, Dummy Grade |
Conductivity type | N-type or Semi-Insulating |
Band-gap | 3.23 eV |
Hardness | 9.2(mohs) |
Thermal Conductivity @300K | 3.2~4.9 W/ cm.K |
Dielectric constants | e(11)=e(22)=9.66 e(33)=10.33 |
Resistivity | 6H-SiC-N: 0.02~0.1 Ω·cm,6H-SiC-SI: >1E7 Ω·cm |
1.Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion.
2.Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures.
3.Silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia.
SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability.
While Silicon carbide (SiC-6H) - 6H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
Overall, the ZMSH Silicon Carbide Wafer is a versatile and high-quality product that can be used in a wide range of applications. Its high thermal conductivity, low power loss, and high strength make it an ideal material for high-temperature and high-power electronic devices. With a Bow/Warp of ≤50um, Surface Roughness of ≤1.2nm, and Resistivity of High/Low Resistivity, the Silicon Carbide Wafer is a reliable and efficient choice for any application that requires a flat and smooth surface.
FAQ:
Q: What is the model number of this product?
A: The model number of this product is Silicon Carbide.
Q: Where is this product from?
A: This product is from China.
Q: What is the difference between silicon and SiC?
A: Silicon has a breakdown voltage of around 600V, but SiC-based devices can withstand voltages that are up to ten times higher. Because bandgap shrinks as temperature rises, wider bandgap materials can also withstand much higher temperatures.
Q: Is SiC a semiconductor?
A: Silicon carbide is a semiconductor that is perfectly suited to power applications, thanks above all to its ability to withstand high voltages, up to ten times higher than those usable with silicon.
ZMSH provides product customization services for our Silicon Carbide Wafer. Our wafers are made with high-quality silicon carbide layer, sourced from China, ensuring durability and reliability. Customers can choose from our selection of wafer sizes and specifications to meet their specific needs.
Our Silicon Carbide Wafer comes in different models and sizes, with the model number Silicon Carbide.
We offer a range of surface finishes, including Single/Double Side Polished, with a surface roughness of ≤1.2nm and flatness of Lambda/10. We also offer High/Low Resistivity options, which can be customized according to your requirements. Our EPD is ≤1E10/cm2, ensuring our wafers meet the highest industry standards.