4H P Type 6H P Type 3C N Type SiC Single Crystal 2inch 4inch 6inch

Product Description:

4H P-Type SiC: This refers to a single-crystal silicon carbide wafer with a 4H crystal structure that is doped with acceptor impurities, making it P-type semiconductor material. 6H P-Type SiC: Similarly, this denotes a single-crystal silicon carbide wafer with a 6H crystal structure that is doped with acceptor impurities, also resulting in P-type semiconductor material. 3C N-Type SiC: This represents a single-crystal silicon carbide wafer with a 3C crystal structure that is doped with donor impurities, leading to N-type semiconductor behavior.

Character:

4H P-Type SiC:
Crystal Structure: 4H denotes the hexagonal crystal structure of silicon carbide.
Doping Type: P-Type indicates that the material is doped with acceptor impurities.
Characteristics:
High electron mobility.
Suitable for high-power and high-frequency electronic devices.
Good thermal conductivity.
Ideal for applications requiring high-temperature operation.
6H P-Type SiC:
Crystal Structure: 6H signifies the hexagonal crystal structure of silicon carbide.
Doping Type: P-Type doping with acceptor impurities.
Characteristics:
Good mechanical strength.
High thermal conductivity.
Used in high-power and high-temperature applications.
Suitable for harsh environment electronics.
3C N-Type SiC:
Crystal Structure: 3C refers to the cubic crystal structure of silicon carbide.
Doping Type: N-Type indicates doping with donor impurities.
Characteristics:
Versatile material for electronics and optoelectronics.
Good compatibility with silicon technology.
Suitable for integrated circuits.
Offers opportunities for wide-bandgap electronics.
These different types of silicon carbide wafers exhibit specific characteristics based on their crystal structures and doping types. Each variation is optimized for distinct applications in electronics, power devices, sensors, and other fields where the unique properties of silicon carbide, such as high thermal conductivity, high breakdown voltage, and wide bandgap, are advantageous.

Applications:

These types of SiC have more role in III-V, Nitride Deposition, Optoelectronic Devices, High-Power Devices, High-Temperature Devices High, Frequency Power Device area.

1. 4H P-Type SiC:
High-Power Electronics: Utilized in high-power electronic devices like power diodes, MOSFETs, and high-voltage rectifiers due to its high electron mobility and thermal conductivity.
RF and Microwave Devices: Suitable for radio frequency (RF) and microwave applications requiring high-frequency operation and efficient power handling.
High-Temperature Environments: Ideal for applications in harsh environments that demand high-temperature operation and reliability, such as aerospace and automotive systems.
2. 6H P-Type SiC:
Power Electronics: Used in power semiconductor devices like Schottky diodes, power MOSFETs, and thyristors for high-power applications with high thermal conductivity and mechanical strength requirements.
High-Temperature Electronics: Applied in high-temperature electronics for industries like aerospace, defense, and energy where reliability under extreme conditions is critical.
3. 3C N-Type SiC:
Integrated Circuits: Suitable for integrated circuits and microelectromechanical systems (MEMS) due to its compatibility with silicon technology and potential for wide-bandgap electronics.
Optoelectronics: Used in optoelectronic devices such as LEDs, photodetectors, and sensors where the cubic crystal structure offers advantages for light emission and detection applications.
Biomedical Sensors: Applied in biomedical sensors for various sensing applications due to its biocompatibility, stability, and sensitivity.

Orientation of SiC substrate:

Customization:

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.

FAQ:

1.Q: What is the difference between 4H-SiC and 6H-SiC?
A: All of the other SiC polytypes are a mixture of the zinc-blende and wurtzite bonding. 4H-SiC consists of an equal number of cubic and hexagonal bonds with a stacking sequences of ABCB. 6H-SiC is composed of two-thirds cubic bonds and one-third hexagonal bonds with a stacking sequences of ABCACB.

2. Q: What is the difference between 3C and 4H SiC?

A: In general 3C-SiC is known as a low- temperature stable polytype whereas 4H-and 6H-SiC are known as high-temperature stable polytypes, which need relatively high temperature to ... ... surface roughness and the amount of defects of the epitaxial layer are correlated to the Cl/Si ratio.

Product Recommend:

6Inch Dia153mm 0.5mm monocrystalline SiC Silicon Carbide crystal seed Wafer or ingot

2.4H-N/Semi Type SiC Ingot And Substrate Industrial Dummy 2inch 3inch 4inch 6inch