SiC Wafer 4inch 4H N type Semi type Production grade Research grade Dummy grade DSP Customization

Product Description of SiC Wafer:

The rapid development of first-generation and second-generation semiconductor materials represented by silicon (Si) and gallium arsenide (GaAs) has propelled the swift advancement of microelectronics and optoelectronics technologies. However, due to limitations in material performance, devices made from these semiconductor materials mostly operate in environments below 200°C, failing to meet the requirements of modern electronics for high-temperature, high-frequency, high-voltage, and radiation-resistant devices.

Therefore, the emergence of next-generation semiconductor materials has become imperative, with silicon carbide wafers emerging as the representative of third-generation semiconductor materials. Silicon carbide wafer exhibits outstanding characteristics such as a wide bandgap (approximately three times that of Si), high thermal conductivity, high electron saturation drift velocity (2.5 times that of Si), and high breakdown electric field (10 times that of Si or 5 times that of GaAs).

The character of SiC Wafer:

1. Wide Bandgap:

Silicon carbide wafers have a wide bandgap, typically ranging from 2.3 to 3.3 electron volts, higher than that of silicon. This wide bandgap enables silicon carbide wafer devices to operate stably in high-temperature and high-power applications and exhibit high electron mobility.
2. High Thermal Conductivity:

The thermal conductivity of silicon carbide wafers is approximately three times that of silicon, reaching up to 480 W/mK. This high thermal conductivity allows silicon carbide. wafer devices to dissipate heat quickly, making them suitable for the thermal management requirements of high-frequency electronic devices.
3. High Breakdown Electric Field:

Silicon carbide wafers have a high breakdown electric field, significantly higher than that of silicon. This means that under the same electric field conditions, silicon carbide wafers can withstand higher voltages, contributing to increased power density in electronic devices.
4. Low Leakage Current:

Due to the structural characteristics of silicon carbide wafers, they exhibit very low leakage currents, making them suitable for applications in high-temperature environments where strict requirements for leakage current exist.

Table of parameters of SiC Wafer:

Physical photo of SiC Wafer:

Applications of SiC Wafer:

1.In the field of electronics, silicon carbide wafers are widely used in the manufacturing of semiconductor devices. Due to its excellent electrical conductivity and thermal conductivity, it can be utilized in the production of high-power, high-frequency, and high-temperature electronic devices such as power transistors, RF field-effect transistors, and high-temperature electronic devices. Additionally, silicon carbide wafers can also be employed in the manufacturing of optical devices like LEDs, laser diodes, and solar cells.Silicon carbide (SiC) wafer is used for hybrid and electric vehicles and green energy generation.

2.In the field of thermal applications, silicon carbide wafers find extensive use as well. With its superior thermal conductivity and high-temperature resistance, it can be used in the production of high-temperature ceramic materials.

3.In the field of optics, silicon carbide wafers also have broad applications. Due to its excellent optical properties and electrical conductivity, it can be used in the manufacturing of optical devices. Furthermore, silicon carbide wafers can also be utilized in the production of optical components such as optical windows.

Image of application of SiC wafer:

FAQ:

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