Sapphire (Al₂O₃), known as nature’s hardest transparent material, is critical in semiconductors, optics, and consumer electronics. Traditional Czochralski (CZ) methods struggle with high thermal stress and crystal defects, limiting their application in high-end markets. The KY Series Sapphire Growth Machine employs the Kyropoulos Method, integrating AI-powered thermal control and modular design to achieve zero dislocations and ultra-low defect density in large-scale single-crystal sapphire production. This technology empowers customers to lead the next wave of photonics and advanced materials innovation.
Core Technological Breakthroughs
Technical Specifications & Differentiators
Component | Technical Specifications |
Crystal Growth | Diameter: 10–500mm, Thickness: 50–300mm (adjustable), Growth Rate: 0.1–5mm/h (continuously variable) |
Melting Furnace | Quartz crucible, Max Temperature: ≥2200°C; Power: 100-200kW (PID-based precise control) |
Gas System | Ar/H₂ mixture control (±1% flow accuracy); Ultra-high vacuum ≤1×10⁻⁶ Pa (ULV-grade environment) |
Intelligent Monitoring | Real-time data acquisition for temperature, pressure, and crystal morphology; AI defect prediction model (response time <3 seconds) |
Key Advantages:
Material Performance & Quality Assurance
Superior Material Properties
Stringent Quality Control
ZMSH KY Sapphire Crystal Growth furnance at Customer's Factory
Frequently Asked Questions (FAQ)
Q: Does the equipment support doping processes?
A: Yes. Fe²⁺/Ti⁴⁺ doping is available for LED phosphor sapphire substrings (luminous efficiency improved by 20%).
Q: What is the footprint of the machine?
A: Standard model occupies 12~15㎡ , compatible with cleanroom deployment.
Q: How to manage maintenance costs?
A: Preventive maintenance plans reduce annual costs by 40%, including predictive analytics and spare parts reserves.