High Efficiency SiC Ingot Growth Furnace for 4-inch, 6-inch, and 8-inch Crystals Using PVT, Lely, and TSSG Methods

Abstract of SiC Ingot Growth Furnance

The SiC Ingot Growth Furnace utilizes graphite resistance heating for efficient silicon carbide crystal growth. It can reach a maximum temperature of 2300°C with a rated power of 80kW. The furnace consumes between 3500kW·h and 4500kW·h per cycle, with crystal growth durations ranging from 5 to 7 days. It measures 2150mm x 1600mm x 2850mm and has a cooling water flow rate of 6m³/h. Operating in a vacuum environment with argon and nitrogen gases, this furnace ensures the production of high-quality SiC ingots with consistent performance and reliable output.

The photo of SiC Ingot Growth Furnance

Our SiC Ingot Growth Furnance' s Crystal Special Crystal Type

SiC has over 250 crystal structures, but only the 4HC type can be used for SiC power devices. ZMSH has successfully assisted clients in growing this specific crystal type multiple times using its own furnace.

Our SiC Ingot Growth Furnace is designed for high-efficiency silicon carbide (SiC) crystal growth, capable of processing 4-inch, 6-inch, and 8-inch SiC wafers. Using advanced techniques like PVT (Physical Vapor Transport), Lely, TSSG (Temperature Gradient Method), and LPE (Liquid Phase Epitaxy), our furnace supports high growth rates while ensuring optimal crystal quality.

The furnace is engineered to grow various SiC crystal structures, including the conductive 4H, semi-insulating 4H, and other crystal types, such as 6H, 2H, and 3C. These structures are crucial for the production of SiC power devices and semiconductors, which are essential for applications in power electronics, energy-efficient systems, and high-voltage devices.

Our SiC furnace ensures precise temperature control and uniform crystal growth conditions, enabling the production of high-quality SiC ingots and wafers for advanced semiconductor applications.

Our SiC Ingot Growth Furnance' s advantage

1.Unique thermal field design

The axial temperature gradient is controllable, the radial temperature gradient is adjustable, and the temperature profile is smooth, resulting in a crystal growth interface that is nearly flat, thus increasing the crystal utilization thickness.

Reduced raw material consumption: The internal thermal field is evenly distributed, ensuring a more uniform temperature distribution within the raw material, significantly improving powder utilization and reducing waste.

There is no strong coupling between the axial and radial temperatures, allowing for high-precision control of both axial and radial temperature gradients. This is the key to solving crystal stress and reducing crystal dislocation density.

2.High control precision

The SiC Ingot Growth Furnace is specifically designed to produce high-quality silicon carbide (SiC) crystals, which are crucial for semiconductor applications, including power electronics, optoelectronics, and energy-efficient devices. SiC is a vital material in the production of components that require high thermal conductivity, electrical efficiency, and durability. Our furnace is equipped with advanced control systems to ensure consistent, optimal performance and crystal quality.

The equipment offers exceptional precision, with a power supply accuracy of 0.0005%, gas flow accuracy of ±0.05 L/h, temperature control accuracy of ±0.5°C, and chamber pressure control accuracy of ±10 Pa. These precise parameters create a stable, uniform crystal growth environment, which is essential for producing high-purity SiC ingots and wafers with minimal defects.

The system’s key components, such as the Proportional Valve, Mechanical Pump, Vacuum Chamber, Gas Flow Meter, and Molecular Pump, work in tandem to ensure reliable performance, improve material utilization, and reduce the occurrence of defects. These elements contribute to the furnace’s ability to produce high-quality SiC crystals that meet the demanding standards of the semiconductor industry.

ZMSH’s technology integrates the latest advancements in crystal growth processes, ensuring the highest standards of SiC crystal production. With the ever-growing demand for high-performance SiC-based components, our equipment is engineered to support industries such as power electronics, renewable energy, and advanced technology development, driving innovations in energy-efficient solutions and sustainable applications.

3. Automated operation

Automatic Response: Signal monitoring, signal feedback

​Automatic Alarm: Over-limit warning, dynamic safety

Automatic Control: Real-time monitoring and storage of production parameters, remote access, and control.

Active Prompt: Expert system, human-machine interaction

ZMSH’s SiC Furnace is equipped with advanced automation for efficient operation. It features automatic response with signal monitoring and feedback, automatic alarms for over-limit conditions, and automatic control for real-time parameter monitoring with remote access. The system also includes active prompts for expert support and seamless human-machine interaction.

These features reduce human dependency, enhance process control, and ensure high-quality SiC ingot production, supporting large-scale manufacturing efficiency.

Our SiC Ingot Growth Furnance's data sheet

Our servise

Tailored One-Stop Solutions

We provide customized Silicon Carbide (SiC) furnace solutions, including PVT, Lely, and TSSG/LPE technologies, tailored to meet your specific needs. From design to optimization, we ensure our systems align with your production goals.

Client Training

We offer comprehensive training to ensure your team fully understands how to operate and maintain our furnaces. Our training covers everything from basic operations to advanced troubleshooting.

On-Site Installation and Commissioning

Our team personally installs and commissions the SiC furnaces at your location. We ensure smooth setup and conduct a thorough verification process to guarantee the system is fully operational.

After-Sales Support

We provide responsive after-sales service. Our team is ready to assist with on-site repairs and troubleshooting to minimize downtime and keep your equipment running smoothly.

We are dedicated to offering high-quality furnaces and continuous support to ensure your success in SiC crystal growth.