Product Overview

This equipment is a high-efficiency, fully automated 8-inch vertical oxidation LPCVD furnace designed for mass production. It offers excellent film uniformity and repeatability, supports various oxidation, annealing, and LPCVD processes. The system features a 21-cassette automatic transfer with seamless MES integration, ideal for semiconductor manufacturing.

Working Principle

The furnace features a vertical tube structure and advanced low-oxygen micro-environment control. It enables precise oxidation or film deposition of silicon wafers under specific atmospheres. The LPCVD (Low-Pressure Chemical Vapor Deposition) process heats precursor gases at low pressure to deposit high-quality thin films such as polysilicon, silicon nitride, or doped silicon oxides.

In chip manufacturing, Low Pressure Chemical Vapor Deposition (LPCVD) is widely used to create various thin films for different purposes. LPCVD can be used to deposit silicon oxide and silicon nitride films. It is also employed to produce doped films to modify the conductivity of silicon. Additionally, LPCVD is used to fabricate metal films, such as tungsten or titanium, which are essential for forming interconnect structures in integrated circuits.

Process Principle

The working principle of LPCVD (Low Pressure Chemical Vapor Deposition) can be understood as a controlled chemical reaction process that takes place at low pressure and involves the reaction of gaseous precursors on the surface of a wafer.

Gas Delivery:
One or more gaseous precursors (chemical gases) are introduced into the reaction chamber. This

step is performed under reduced pressure, typically below atmospheric level. Lower pressure helps to enhance reaction rates, improve uniformity, and enhance film quality. The flow rate and pressure of the gases are precisely controlled by specialized controllers and valves. The choice of gas determines the properties of the resulting film. For example, to deposit silicon films, silane (SiH₄) or dichlorosilane (SiCl₂H₂) may be used as precursors. Different gases are selected for other types of films, such as silicon oxide, silicon nitride, or metals.

Adsorption:
This process involves the adsorption of precursor gas molecules onto the substrate surface (e.g., silicon wafer). Adsorption refers to the interaction where molecules temporarily adhere to the solid surface from the gas phase, without fully integrating into the solid. This can involve physical adsorption or chemical adsorption.

Reaction:
At the set temperature, the adsorbed precursors undergo chemical reactions on the substrate surface, forming a thin film. These reactions may include decomposition, substitution, or reduction, depending on the type of precursor gases and process conditions.

Deposition:
The reaction products form a thin film that deposits uniformly on the substrate surface.

Removal of Residual Gases:
Unreacted precursors and gaseous byproducts (e.g., hydrogen generated during silane decomposition) are removed from the reaction chamber. These byproducts must be evacuated to avoid interference with the process or contamination of the film.

Application Fields

• Integrated Circuit (IC) fabrication

• MEMS (Micro-Electro-Mechanical Systems)

• Optoelectronic device packaging

• Power devices and sensors

• Dielectric layer deposition in advanced packaging

Q&A

Q1: How many wafers can be processed per batch?
A1: The system supports 150 wafers per batch, suitable for high-volume production.

Q2: Does the system support multiple oxidation methods?
A2: Yes, it supports dry and wet oxidation (including DCE and HCL), adaptable to diverse process requirements.

Q3: Can the system interface with the factory MES?
A3: It supports SECS II/HSMS/GEM communication protocols for seamless MES integration and smart factory operations.

Q4: What compatible processes are supported?
A4: Besides oxidation, it supports N₂/H₂ annealing, RTA, alloying, and LPCVD for polysilicon, SiN, TEOS, SIPOS, and more.