4 inch customizable LED sapphire substrate, wide application range
Product Description
Sapphire has high reliability, high strength, high durability, high scratch resistance, wide transmission range and low transmission wavefront distortion under high and low temperature conditions. It can be used in a variety of high-precision windows, a variety of lasers and industries. Application, widely used in mobile phone panels, digital cameras and other fields.
Technical Specification
Properties | Unit | 4 inch substrate |
Diameter | mm | 100.1±0.1 |
Flat Length | mm | 31±1 |
Material | High Purity and Monocrystalline Al2O3 | |
Surface Crystal Orientation | C-Plane 0°±0.1° | |
Primary Flat Orientation | A-plane 0°±0.5° | |
Broke Edge | ≤3mm | |
Crack | No Cracking | |
Defect | No Wrappage,Twin Crystal or Crystal Boundary | |
EPD | <1000/cm² |
Product Features
The hardness of sapphire is very high, and its hardness is second only to diamond in natural materials, but it needs to be thinned and cut during the manufacturing process of LED devices. Its cutting accuracy is calculated at the μm level. This is for sapphire substrate cutting The technological requirements put forward a very high test.
Due to the wide optical penetration band of sapphire, it has good light transmittance from near-ultraviolet light to mid-infrared light. Therefore, it is widely used in optical components, infrared devices, high-intensity laser lens materials and mask materials.
It has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmittance, and high melting point (2045°C). It is a very difficult material to process, so it is often used as a material for optoelectronic components. At present, the quality of ultra-high-brightness white/blue LEDs depends on the material quality of gallium nitride epitaxy (GaN), and the quality of gallium nitride epitaxy is closely related to the surface processing quality of the sapphire substrate used.