Specifications
Brand Name :
Silian
Model Number :
Customized
Certification :
SGS/ ISO
Place of Origin :
Chongqing,China
MOQ :
500pcs
Price :
Negotiable
Payment Terms :
Western Union, T/T, MoneyGram
Supply Ability :
20,000 pcs/month
Delivery Time :
5-8 weeks
Packaging Details :
1pcs/12pcs/25 pcs
Name :
4 Inch Sapphire Substrate
purity :
≥99.998%
Front Side Surface :
Mirror polished , EPI-Ready
Orientation :
C plane tiled M axis 0.20°±0.1°
Color :
Colorless and transparent
Back side Roughness :
0.8-1.2um
Diameter :
100 ± 0.15mm
Thickness :
650 ± 20um
Description

4 Inch Sapphire Substrate Is Widely Used

Product Description

The epitaxial layers of GaN-based materials and devices are mainly grown on sapphire substrates. Sapphire substrate has many advantages: firstly, the production technology of sapphire substrate is mature and the device quality is good; secondly, sapphire is very stable and can be used in the high-temperature growth process; finally, sapphire has high mechanical strength and is easy to handle And cleaning. Therefore, most processes generally use sapphire as the substrate.

Technical Specification

Item 4" Unit
Dimension Diameter: 100 ± 0.15 mm
Thickness: 650 ± 20 um
Primary Flat: 30+1.0 mm
Orientation Surface-cut: C plane : Tilt 0.2°±0.1° in M axis / ~
Primary Flat: A plane : 0° ± 0.15° ~
Flatness Bow: 0 ~ (-10) um
Warp: ≤ 20 um
Total Thickness Variation (TTV): ≤ 10 um
LTV ≤2.5 um
Front side Roughness ≤0.2 nm
Back side Roughness 0.8-1.2 um
Cleanliness No particles and fingerprints ~
4.Material Quality High-purity mono-crystal Al2O3 ~
5.Package Wafers are packed in cleaned wafer cassettes containing 25 wafers under clean room environment. ~
6.Trace Ability Wafers shall be traceable with respect to cassette number. The wafer box should be marked with a removable label showing the date, the cassette number and the quantity. ~
7.Laser Mark Front or Back side ~

Working principle

The working principle of the LED is that in the case of forward conduction, the electrons and holes injected into the P/N section of the diode meet and recombine, and the potential energy is converted into light energy. The wavelength of the emitted photons (that is, the color of light) is determined by the energy band width of the semiconductor. The current blue and green LED devices are based on group III nitride semiconductors, which is mainly GaN, and InNAlN is the supplementary four. Yuan AlGaInN alloy system.

To epitaxially grow a GaN film on a sapphire substrate, firstly a two-step epitaxial GaN buffer layer on the substrate (low-temperature epitaxial GaN nucleation layer, then high-temperature epitaxial u-GaN buffer layer); the second step is to grow Si-doped n-GaN The third step is to grow a multifunctional quantum well to provide a radiation recombination center, allowing electrons and holes to recombine and emit light; the fourth step to grow a Mg-doped p-GaN layer to provide hole injection. Normally, the LED structure is as shown in the picture.

100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength

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100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength

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Brand Name :
Silian
Model Number :
Customized
Certification :
SGS/ ISO
Place of Origin :
Chongqing,China
MOQ :
500pcs
Price :
Negotiable
Contact Supplier
100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength
100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength
100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength

Chongqing Silian Optoelectronic Science & Technology Co., Ltd.

Active Member
5 Years
chongqing, chongqing
Since 2008
Business Type :
Manufacturer, Distributor/Wholesaler, Importer, Exporter, Seller
Total Annual :
65,000,000-70,000,000
Employee Number :
400~500
Certification Level :
Active Member
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