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No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
Specifications
Brand Name :
Silian
Model Number :
Customized
Certification :
SGS/ ISO
Place of Origin :
Chongqing，China
MOQ :
500pcs
Price :
Negotiable
Payment Terms :
Western Union, T/T, MoneyGram
Supply Ability :
20,000 pcs/month
Delivery Time :
5-8 weeks
Packaging Details :
1pcs/12pcs/25 pcs
Diameter :
150.1±0.1
Flat Length :
47.5±1
Bow :
0 ~ (-10) um
Color :
Transparent; other colors
Material :
High Purity and Monocrystalline AL2O3
Surface Crystal Orientation :
C-Plane 0°±0.1°
Primary Flat Orientation :
A-plane 0°±0.5°
Broke Edge :
≤3mm
Description

6-inch sapphire substrate with good light transmittance

Product Description

The chemical composition of sapphire crystal is alumina, with the crystal structure hexagonal lattice. Sapphire is a commonly used substrate material for gallium nitride (GaN) epitaxial growth. It has ultra-high hardness, stable physical and chemical properties at high temperatures, excellent optical performance.

Technical Specification

Properties Unit 6 inch substrate
Diameter mm 150.1±0.1
Flat Length mm 47.5±1
Material High Purity and Monocrystalline AL2O3
Surface Crystal Orientation C-Plane 0°±0.1°
Primary Flat Orientation A-plane 0°±0.5°
Broke Edge ≤3mm
Crack No Cracking
Defect No Wrappage,Twin Crystal or Crystal Boundary
EPD ＜1000/cm²

Performance research

The semi-polar and non-polar GaN can be grown on the sapphire substrate with some special planes like M-plane <1-100>and R-plane <1-102>. The semi-polar and non-polar GaN have good performance to improve the device droop effect, wavelength shift phenomenon and long wavelength band efficiency of LED device. Studies have shown that using the high-temperature AlN nucleation layer and the higher AlGaN growth temperature, or a buffer layer with the multilayer AlGaN, or using Si doping technique can effectively improve the crystal quality and the dislocation density of semi-polar and non-polar AlGaN thin films grown on sapphire substrates.

No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

Product tags

tungsten lamp wavelength

,

led aluminium profile 3m

,

3d crystal led light base
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No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

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Product Detail
Brand Name :
Silian
Model Number :
Customized
Certification :
SGS/ ISO
Place of Origin :
Chongqing，China
MOQ :
500pcs
Price :
Negotiable
Contact Supplier
No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

Chongqing Silian Optoelectronic Science & Technology Co., Ltd.

Active Member
5 Years
chongqing, chongqing
Since 2008
Business Type :
Manufacturer, Distributor/Wholesaler, Importer, Exporter, Seller
Main Products :
Sapphire Optical Window, Sapphire Wafer, Sapphire Crystal Watch Case
Total Annual :
65,000,000-70,000,000
Employee Number :
400~500
Certification Level :
Active Member
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