IRFB3306PBF High Power MOSFET for Power Electronics Applications
IRFB3306PBF Power MOSFET
Parameters:
VDS - 100V
ID - 30A
RDS(on) - 0.0088 ohm
Manufacturer: International Rectifier
Package Type: TO-220
Maximum Gate Threshold Voltage: 4V
Maximum Drain Source Voltage: 100V
Maximum Drain Current: 30A
Maximum Power Dissipation: 13W
Operating Temperature Range: -55°C to 150°C
Mounting Type: Through Hole
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