MOSFET Power Electronics IPP65R190CFD High-Performance High-Efficiency FETs for Enhanced Power Delivery
We are proud to present the IPP65R190CFD MOSFET, an advanced power device with the following features:
- Maximum Drain Source Voltage (Vdss): 650V
- Maximum Drain Current (Id): 190A
- RDS(on): 0.66mΩ
- Pulsed Drain Current (Idm): 378A
- Maximum Gate Source Voltage (Vgss): 20V
- Maximum Gate Drain Leakage Current (Id): 100nA
- Maximum Power Dissipation (Pd): 550W
- Package: TO-247
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Service >>>
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