NTMS4177PR2G 8-SOIC MOSFET Power Electronics Module P-Channel 30 V 11.4 A
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 12mOhm @ 11.4A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 24 V | |
FET Feature | - | |
Power Dissipation (Max) | 840mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-SOIC | |
Package / Case |
Product Listing:
ON Semiconductor NTMS4177PR2G N-Channel MOSFET Power Electronics
Product Parameters:
• Package: 8-SOIC
• Drain-Source Voltage: 40V
• Drain Current: 34A
• Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 34A, 10V
• Gate Charge (Qg) @ Vgs: 15.9nC @ 10V
• Power – Max: 5.6W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount