NTHD3101FT1G 8-SMD MOSFET Power Electronics Transistor for High-Frequency Switching Applications
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 80mOhm @ 3.2A, 4.5V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 10 V | |
FET Feature | Schottky Diode (Isolated) | |
Power Dissipation (Max) | 1.1W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | ChipFET™ | |
Package / Case |
Product Listing:
Product Name: NTHD3101FT1G MOSFET Power Electronics
Manufacturer: Onsemi
Package: 8-SMD
Parameters:
•VDSS: -30V
•RDS(on): 0.006Ω
•ID: -30A
•Qg: 9nC
•Input Capacitance (Ciss): 327pF
•Output Capacitance (Coss): 35pF
•Transition Frequency (ft): 8GHz
•Pulsed Drain Current (IDM): -60A
•Threshold Voltage (VGS(th)): -2.3V