The 2N7002L is a N-Channel enhancement mode Field Effect Transistor (FET) in a TO-236-3 metal package. This device is suitable for use in switching and linear applications due to its low on resistance at a maximum of 2.5 ohms, making it ideal for high speed switching applications. It is also capable of withstanding high drain-source voltages up to 20V with a maximum drain current of 500mA. This FET is designed for low voltage and low current applications, making it suitable for a variety of automotive and industrial applications. The 2N7002L features an ESD rating of up to 2kV and a maximum operating temperature of 125°C. The device is also RoHS compliant and lead-free, making it a reliable and safe choice for a wide range of applications.

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