NTR3C21NZT1G SOT-23 MOSFET Power Electronics Power Single N-Channel 2.4 x 2.9 x 1.0 mm20 V 3.6 A
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 5A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 17.8 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 1540 pF @ 16 V | |
FET Feature | - | |
Power Dissipation (Max) | 470mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Package / Case |
Product listing:
ON Semiconductor NTR3C21NZT1G MOSFET Power Electronics SOT-23
Features:
• Low On-Resistance
• Low Input Capacitance
• Low Input and Output Leakage
• Low Gate Charge
• Low Threshold Voltage
• ESD Protection
Applications:
• Automotive
• Battery Management
• Converters
• Industrial
• Motor Control
• System Power Management
Specifications:
• Package: SOT-23
• Configuration: N-Channel
• Transistor Polarity: N-Channel
• Drain-Source Voltage (Vdss): 30 V
• Gate-Source Voltage (Vgs): ±20 V
• Current - Continuous Drain (Id) @ 25°C: -0.2 A
• Rds On (Max) @ Id, Vgs: 0.0085 Ohm @ 0.2 A, 10 V
• Power - Max: 350 mW
• Operating Temperature: -55°C to 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Pd - Power Dissipation