The BSS138 is a N-channel enhancement mode Field Effect Transistor (FET) housed in a TO-236-3 package. It is specifically designed for low voltage, low current switching applications. The device features an ultra-low on-resistance, fast switching times and a simple drive requirement. It is ideal for applications such as switching and level shifting in consumer, industrial, communication and automotive markets.

This FET offers excellent thermal and electrical characteristics, with a maximum drain-source breakdown voltage of 40V and a maximum continuous drain current of 200mA. This device also features a low gate threshold voltage of 1.8V and a maximum junction temperature of 150°C. The BSS138 is RoHS compliant, making it suitable for lead-free applications.

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