Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 199mOhm @ 10A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 208W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-220-3 | |
Package / Case |
OnSemi FCP190N60-GF102 Power MOSFET
Product Description:
The OnSemi FCP190N60-GF102 is a N-Channel power MOSFET with a rated voltage of 60V, a continuous drain current of 190A at 25°C, and a maximum drain-source voltage of 500V. The FCP190N60-GF102 is optimized for maximum efficiency and has a low gate charge of 20 nC typical. It also features an improved RDS(on) performance of 0.012Ω at 25°C, and a high current handling capability of 1.2A. Furthermore, the FCP190N60-GF102 has a maximum operating temperature of 150°C and is suitable for a wide range of applications, such as DC-DC converters, consumer electronics, and automotive applications.
Features:
• Rated Voltage: 60V
• Continuous Drain Current: 190A at 25°C
• Maximum Drain-Source Voltage: 500V
• Gate Charge: 20 nC typical
• RDS(on): 0.012Ω at 25°C
• High Current Handling: 1