FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 14mOhm @ 10.2A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 897 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-SOIC | |
Package / Case |
The FDS8878 8-SOIC Power MOSFET is a high-performance, low-on-resistance discrete power MOSFET. It is designed to provide superior switching performance in both high- and low-voltage applications. The device features low gate-charge, low on-resistance, and excellent switching characteristics.
It is capable of handling high current levels and provides superior RDS(on) performance for improved system efficiency. Its low gate-charge allows for faster switching speeds and improved system performance. The FDS8878 is ideal for high-power applications, such as power supplies, DC-DC converters, and motor control circuits. It is available in an 8-SOIC package, and is RoHS compliant.
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