Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 26A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 59W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
Product Listing:
Product Name: ON Semiconductor FDMS8023S N-Channel Power MOSFET
Description: The FDMS8023S is an N-Channel power MOSFET from ON Semiconductor. It is designed to provide low on-state resistance and fast switching speed, and includes an integrated gate protection diode.
Features:
- Low On-State Resistance
- Fast Switching Speed
- Includes an Integrated Gate Protection Diode
Specifications:
- Voltage Rating: 30V
- Current Rating: 30A
- Power Dissipation: 4.1W
- Operating Temperature Range: -55°C to 150°C