FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 0.75mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 181 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 12168 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.2W (Ta), 167W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
Package / Case |
The NTMFS5C404NLT1G is an advanced power MOSFET from ON Semiconductor. It is a low-threshold, single N-channel enhancement-mode MOSFET housed in an 8-pin PowerTDFN package. This MOSFET has a maximum drain source voltage of 40V, a maximum drain current of 8A, and a maximum drain-source on-resistance of 4mΩ.
It is designed to operate at a maximum junction temperature of 150°C and can deliver high efficiency power management in a wide range of applications, including DC/DC converters, power supplies, data switches, and motor control. Additionally, this device features low gate charge and low input and output capacitance, making it ideal for use in high-frequency switching applications.
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