FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 11mOhm @ 92A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4510 pF @ 75 V | |
FET Feature | - | |
Power Dissipation (Max) | 234W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | D²PAK (TO-263) | |
Package / Case |
The FDB110N15A is a N-channel MOSFET power electronic device manufactured by Fairchild Semiconductor. This device is housed in a TO-263-3 package, which is a small surface-mountable package that provides low-profile, enhanced thermal performance.
The FDB110N15A is designed to deliver high power in a compact package. It features a low on-resistance which enables low conduction losses, and a low gate charge which reduces switching losses. Additionally, this device is designed to provide fast switching speeds and low gate charge for efficient switch operation.
The FDB110N15A is ideal for use in a variety of applications such as DC/DC converters, power factor correction, motor control, lighting control, and other high-power applications. This device is RoHS compliant and meets UL and CSA safety standards for reliable operation.
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