FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 800mOhm @ 200mA, 10V | |
Vgs(th) (Max) @ Id | 2.3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 2.18 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 5 V | |
FET Feature | - | |
Power Dissipation (Max) | 225mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Package / Case |
The NVTR0202PLT1G is a P-Channel Enhancement Mode Vertical Field-Effect Transistor (VFET), which is designed specifically for high-frequency, low-voltage applications. This device is constructed using a highly reliable MOSFET process, which provides low on-state resistance and excellent switching performance. The device is housed in a TO-236-3 package and provides a low-voltage operation range of -0.2V to -20V and a low gate-source threshold voltage of -0.5V. It is ideal for high-frequency switching circuits and provides high current handling capability. The device also offers superior power efficiency, low EMI, and minimal power dissipation.
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