FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 21mOhm @ 25A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 866 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 48.4W (Tj) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-252AA | |
Package / Case |
The FDD86381-F085 is an advanced Power MOSFET from Infineon Technologies. This device is a high-voltage, low-on-resistance, and high-current, 3-pin, TO-252-3 package device. It is ideal for use in power management and conversion applications such as DC-DC converters, or in the automotive and industrial sectors.
This device features an integrated SiC Schottky diode, which helps to reduce switching losses and increase system efficiency. The FDD86381-F085 is designed to incorporate the latest advances in semiconductor device technology to provide a robust, reliable, and cost-effective solution for many applications. This product offers high voltage and current capabilities, low on-resistance, and fast switching times, making it a suitable choice for many applications.
The device is AEC-Q101 qualified, making it suitable for automotive applications. It is also RoHS compliant and UL certified, making it safe for use in a wide range of applications. The FDD86381-F085 is a versatile, high-performance device that is well suited for a wide range of applications.
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