FDMS7660AS N-Channel 30V 82A Synchronous Rectified MOSFET 8-PQFN Package for High Efficiency Power Electronics Applications
rain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 25A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 6120 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 83W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
ON Semiconductor FDMS7660AS N-Channel Power MOSFET, 8-PQFN
Product Description:
The FDMS7660AS is an N-Channel Power MOSFET designed to provide high efficiency and low power losses in power conversion and switching applications. This device is offered in an 8-PQFN package and features a maximum drain-source voltage of 600V, a maximum drain current of 12A, and a maximum gate charge of 90nC.
Features:
• N-Channel Power MOSFET
• Maximum Drain-Source Voltage: 600V
• Maximum Drain Current: 12A
• Maximum Gate Charge: 90nC
• Package: 8-PQFN