Product Listing:
FQD16N25CTM MOSFET Power Electronics
Features:
• Low RDS(on) for high efficiency
• Ultra low Qg and Qgd for fast switching
• Low threshold voltage (Vth) for low power consumption
• Low gate charge (Qg) for high frequency operation
• Low thermal resistance (Rth) for high power dissipation
• Available in a wide range of surface mount packages
Parameters:
• Drain-Source Voltage (VDS) : 25V
• Drain-Source Current (ID) : 16A
• Gate-Source Voltage (VGS) : 10V
• Continuous Drain Current (ID): 16A
• Drain-Source On-State Resistance (RDS(on)): 0.0056 Ohm
• Power Dissipation (PD): 43W
• Operating Temperature Range: -55°C to +150°C
• Maximum Junction Temperature: 175°C
Product Status | Active | |
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 270mOhm @ 8A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 53.5 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 160W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-252AA | |
Package / Case | | |
Base Product Number |
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