IRFB4019PBF MOSFET Power Electronics
Product Description:
The IRFB4019PBF is a high-performance, silicon-based MOSFET power electronics device from International Rectifier. It is a voltage-controlled insulated-gate bipolar transistor (IGBT) that is designed to provide superior performance in power supply and other power conversion applications. This device is available in a TO-220AC package with an extended thermal pad.
Features:
• Low on-state resistance (RDS(on))
• Low gate charge (Qg)
• Low gate-source capacitance (Ciss)
• Maximum junction temperature (Tjmax) of 175°C
• Maximum drain to source voltage (VDS) of 600V
• Maximum drain current (ID) of 60A
• Operating temperature range from -55°C to 175°C
• Pb-free, RoHS compliant
Application:
The IRFB4019PBF is suitable for use in a wide range of applications such as power supplies, solar power inverters, motor controllers, and other power conversion applications.
Product Status | Active | |
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 95mOhm @ 10A, 10V | |
Vgs(th) (Max) @ Id | 4.9V @ 50µA | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 80W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-220AB | |
Package / Case | | |
Base Product Number |
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