IPD60R2K1CEAUMA1 MOSFET Power Electronics

Product Description:

The IPD60R2K1CEAUMA1 is a N-channel Power MOSFET, optimized for power switching applications. This device is designed using advanced Trench MOSFET technology for excellent RDS(ON) and low gate charge. It provides superior switching performance with fast switching times and low-level gate charge. With a wide range of VDSS, this device is suitable for a variety of power applications.

Features:

• N-Channel Power MOSFET
• Advanced Trench MOSFET technology
• Optimized for power switching applications
• Low RDS(ON)
• Low gate charge
• Fast switching times
• Low-level gate charge
• Wide range of VDSS
• Suitable for a variety of power applications

Specifications:

• Drain-Source Voltage (VDSS): 60V
• Drain Current (ID): 2A
• RDS(ON): 1.45mΩ
• Gate-Source Voltage (VGS): ±20V
• Maximum Power Dissipation (PD): 2.2W
• Operating Temperature: -55°C to +150°C

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