MOSFET Power Electronics NVMFS5C646NLAFT1G
Product Description:
The MOSFET Power Electronics NVMFS5C646NLAFT1G is a N-channel MOSFET power electronics module with an operating voltage of 20V and a maximum drain-source voltage of 30V. This module features a low gate threshold voltage and a low input capacitance, making it an ideal choice for power electronics applications. The module is equipped with an integrated low-resistance source-drain diode and can handle up to a continuous current rating of 5A.
Product Features:
• N-Channel MOSFET Power Electronics Module
• Operating Voltage: 20V
• Maximum Drain-Source Voltage: 30V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Integrated Low-Resistance Source-Drain Diode
• Continuous Current Rating: 5A
Product Status | Active | |
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 4.7mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 33.7 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2164 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.7W (Ta), 79W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
Package / Case | | |
Base Product Number |
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